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quality Durable MSKSEMI MEL357C semiconductor device designed for electronic circuit and system performance factory
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quality Durable MSKSEMI MEL357C semiconductor device designed for electronic circuit and system performance factory
>

Durable MSKSEMI MEL357C semiconductor device designed for electronic circuit and system performance

Specifications
Fall time:
3us
Output Current:
50mA
Rise time:
4us
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
9V
Current transfer ratio:
130%;260%
Forward Current(If):
50mA
Pd - Power Dissipation:
200mW
Number of Channels:
1
Load Type:
Phototransistor
Input type:
DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
MEL357C
Package:
SOP-4
Key Attributes
Model Number: MEL357C
Product Description

2504101957_MSKSEMI-MEL357C_C41383950.pdf
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