Optocoupler device MSKSEMI PC817C-MS featuring GaAs infrared diode and NPN phototransistor for signal switching applications
Key Attributes
Model Number:
PC817C-MS
Product Custom Attributes
Rise Time:
6us
Fall Time:
5us
Output Current:
150nA
Vce Saturation(VCE(sat)):
200mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;400%
Forward Current(If):
50mA
Pd - Power Dissipation:
200mW
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
PC817C-MS
Package:
SOP-4
Product Description
Product Overview
The PC817x-MS series is a family of high-reliability optocouplers designed for various industrial applications. Featuring a GaAs infrared emitting diode coupled with an NPN silicon phototransistor, these devices offer excellent isolation voltage (5,000Vrms) and fast response times (typ. 6s rise, 5s fall). They are suitable for signal transmission, switching power supplies, electric meters, computers, measurement equipment, storage devices, copiers, vending machines, and home appliances.
Product Attributes
- Brand: Msksemi
- Series: PC817x-MS
- Construction: GaAs infrared emitting diode and NPN silicon phototransistor
- Pin Center Spacing: 2.54mm
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typical | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Absolute Ratings (Ta=25) | ||||||
| Forward Current | IF | 50 | mA | |||
| Reverse Voltage | VR | 6 | V | |||
| Consume Power (Input) | P | 70 | mW | |||
| Collector and emitter Voltage | VCEO | 35 | V | |||
| Emitter and collector Voltage | VECO | 6 | ||||
| Collector Current | IC | 50 | mA | |||
| Consume Power (Output) | PC | 150 | mW | |||
| Total Consume Power | Ptot | 200 | mW | |||
| Insulation Voltage | Viso | AC Test, 1 minute, humidity 40~60% | 5,000 | Vrms | ||
| Max Insulation Voltage | VIOTM | 6,000 | V | |||
| Rated Impulse Insulation Voltage | VIORM | 630 | V | |||
| Working Temperature | Topr | -55 | 110 | |||
| Storage Temperature | Tstg | -55 | 125 | |||
| Soldering Temperature | Tsol | Soldering time 10 seconds | 260 | |||
| Optoelectronic Characteristics (Ta=25) | ||||||
| Forward Voltage | VF | IF=20mA | 1.40 | V | ||
| Reverse Current | IR | VR=5V | 5 | uA | ||
| Collector capacitance | Ct | V=0, f=1MHz | 30 | 250 | pF | |
| Collector to emitter Current | ICEO | VCE=70V, IF=0mA | 150 | n A | ||
| Collector and Emitter attenuation Voltage | BVCEO | IC=0.1mA, IF=0mA | 70 | V | ||
| Emitter and Collector attenuation Voltage | BVECO | IE=10A, IF=0mA | 6 | V | ||
| Transfer Characteristics | ||||||
| Current conversion ratio | CTR | IF=5mA, VCE=5V | 50 | 600 | % | |
| Collector and Emitter Saturation Voltage | VCE(sat) | IF=20mA, IC=1mA | 0.1 | 0.2 | V | |
| Insulation Impedance | Riso | DC500V, 40~60%R.H. | 51010 | 11011 | ||
| Capacitance | Cf | V=0, f=1MHz | 0.6 | 1 | pF | |
| Transforming Frequency | fc | VCE=5V, IC=2mA, RL=100, -3dB | 80 | kHz | ||
| Rise time | tr | VCE=2V, IC=2mA, RL=100 | 6 | 18 | s | |
| Descend Time | tf | VCE=2V, IC=2mA, RL=100 | 5 | 18 | s | |
| Current Conversion Ratio Grades | ||||||
| Grade | Sign | Min (%) | Max (%) | |||
| A | 100 | 160 | ||||
| B | 130 | 260 | ||||
| C | 200 | 400 | ||||
| D | 300 | 600 | ||||
| A or B or C or D | 50 | 600 | ||||
| Package Dimensions | ||||||
| Package Type | Unit: mm (inch) | |||||
| DIP-4 | ||||||
| SOP-4 | ||||||
| Product Ordering Information | ||||||
| Product Name | Package | Packing | Minimum Package | Package Quantity | ||
| PC817X-MS | DIP-4 | Tube | 100PCS/Tube | 1000PCS/Box | ||
| PC817X-MS | SOP-4 | Reel | 2000PCS/Reel | 10000PCS/Box | ||
2401210730_MSKSEMI-PC817C-MS_C7472816.pdf
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