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quality phototransistor photocoupler KTP PC817SC designed for signal isolation in measuring instruments and telecommunication devices factory
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quality phototransistor photocoupler KTP PC817SC designed for signal isolation in measuring instruments and telecommunication devices factory
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phototransistor photocoupler KTP PC817SC designed for signal isolation in measuring instruments and telecommunication devices

Specifications
Rise time:
18us
Fall time:
18us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current transfer ratio:
200%;400%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number of Channels:
1
Load Type:
Phototransistor
Input type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
PC817SC
Package:
SOP-4
Key Attributes
Model Number: PC817SC
Product Description

Product Overview

The PC817 series of devices are phototransistor photocouplers, each comprising an infrared emitting diode optically coupled to a phototransistor detector. Packaged in a 4-pin DIP, they are available in wide-lead spacing and SMD options. These photocouplers are designed for signal transmission between circuits of different potentials and impedances, making them suitable for applications in programmable controllers, system appliances, measuring instruments, telecommunication equipment, and home appliances.

Product Attributes

  • Brand: KTP Semiconductor
  • Certifications: UL and cUL approved (No.E214129), VDE approved (No. 132249), SEMKO approved, NEMKO approved, DEMKO approved, FIMKO approved, CQC approved
  • RoHS Compliant: Yes
  • REACH Compliant: Yes

Technical Specifications

ParameterSymbolRatingUnitCondition
Absolute Maximum Ratings
Forward currentIF60mATa=25
Peak forward current (1us, pulse)IFP1ATa=25
Reverse voltageVR6VTa=25
Power dissipationPD100mWTa=25
Power dissipation Derating factor-2.9mW/CAbove Ta = 100C
Output Power dissipationPC150mWTa=25
Output Power dissipation Derating factor-5.8mW/CAbove Ta = 100C
Collector currentIC50mATa=25
Collector-Emitter voltageVCEO35VTa=25
Emitter-Collector voltageVECO6VTa=25
Total Power DissipationPTOT200mWTa=25
Isolation Voltage*1VISO5000VrmsAC for 1 minute, R.H.= 40 ~ 60% R.H.
Operating TemperatureTOPR-55 to 110C-
Storage TemperatureTSTG-55 to 125C-
Soldering Temperature*2TSOL260CFor 10 seconds
Electro-Optical Characteristics
Forward VoltageVF-1.2 - 1.4VIF = 20mA
Reverse CurrentIR-- 10AVR = 4V
Input capacitanceCin-30 - 250pFV = 0, f = 1kHz
Collector-Emitter dark currentICEO-- 100nAVCE = 20V, IF = 0mA
Collector-Emitter breakdown voltageBVCEO35- -VIC = 0.1mA
Emitter-Collector breakdown voltageBVECO6- -VIE = 0.1mA
Current Transfer ratio (PC817)CTR50- 600%IF = 5mA ,VCE = 5V
Current Transfer ratio (PC817A)CTR80- 160%IF = 5mA ,VCE = 5V
Current Transfer ratio (PC817B)CTR130- 260%IF = 5mA ,VCE = 5V
Current Transfer ratio (PC817C)CTR200- 400%IF = 5mA ,VCE = 5V
Current Transfer ratio (PC817D)CTR300- 600%IF = 5mA ,VCE = 5V
Current Transfer ratio (PC817X)CTR100- 200%IF = 5mA ,VCE = 5V
Current Transfer ratio (PC817Y)CTR150- 300%IF = 5mA ,VCE = 5V
Collector-Emitter saturation voltageVCE(sat)-0.1 - 0.2VIF = 20mA ,IC = 1mA
Isolation resistanceRIO51010- -VIO = 500Vdc, 40~60% R.H.
Floating capacitanceCIO-0.6 - 1.0pFVIO = 0, f = 1MHz
Cut-off frequencyfc-80 -kHzVCE = 5V, IC = 2mA RL = 100, -3dB
Rise timetr-- 18sVCE = 2V, IC = 2mA, RL = 100
Fall timetf-- 18sVCE = 2V, IC = 2mA, RL = 100

2401261513_KTP-PC817SC_C20612450.pdf

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