Phototransistor photocoupler KTP PC817C with wide operating temperature range and RoHS REACH compliance
Key Attributes
Model Number:
PC817C
Product Custom Attributes
Rise Time:
18us
Fall Time:
18us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;400%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
PC817C
Package:
DIP-4
Product Description
Product Overview
The PC817 series phototransistor photocoupler consists of an infrared emitting diode optically coupled to a phototransistor detector. Packaged in a 4-pin DIP, it is available in wide-lead spacing and SMD options. This series offers high isolation voltage, a wide operating temperature range, and compact packaging, making it suitable for signal transmission between circuits of different potentials and impedances.
Product Attributes
- Brand: KTP Semiconductor
- Certifications: UL, cUL (No.E214129), VDE (No. 132249), SEMKO, NEMKO, DEMKO, FIMKO, CQC
- RoHS Compliant: Yes
- REACH Compliant: Yes
Technical Specifications
| Parameter | Symbol | Rating | Unit | Condition | ||
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Forward current | IF | 60 | mA | |||
| Peak forward current (1us, pulse) | IFP | 1 | A | |||
| Reverse voltage | VR | 6 | V | |||
| Power dissipation | PD | 100 | mW | Ta=25 | ||
| Derating factor (above Ta = 100C) | 2.9 | mW/C | ||||
| Output Power dissipation | PC | 150 | mW | Ta=25 | ||
| Derating factor (above Ta = 100C) | 5.8 | mW/C | ||||
| Collector current | IC | 50 | mA | |||
| Collector-Emitter voltage | VCEO | 35 | V | |||
| Emitter-Collector voltage | VECO | 6 | V | |||
| Total Power Dissipation | PTOT | 200 | mW | |||
| Isolation Voltage*1 | VISO | 5000 | Vrms | AC for 1 minute, R.H.= 40 ~ 60% R.H. | ||
| Operating Temperature | TOPR | -55 to 110 | C | |||
| Storage Temperature | TSTG | -55 to 125 | C | |||
| Soldering Temperature*2 | TSOL | 260 | C | For 10 seconds | ||
| Electro-Optical Characteristics | ||||||
| Forward Voltage | VF | - | 1.2 - 1.4 | V | IF = 20mA | |
| Reverse Current | IR | - | - | 10 A | VR = 4V | |
| Input capacitance | Cin | - | 30 - 250 | pF | V = 0, f = 1kHz | |
| Collector-Emitter dark current | ICEO | - | - | 100 nA | VCE = 20V, IF = 0mA | |
| Collector-Emitter breakdown voltage | BVCEO | 35 | - | - | V | IC = 0.1mA |
| Emitter-Collector breakdown voltage | BVECO | 6 | - | - | V | IE = 0.1mA |
| Current Transfer ratio (PC817) | CTR | 50 | - | 600 | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio (PC817A) | CTR | 80 | - | 160 | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio (PC817B) | CTR | 130 | - | 260 | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio (PC817C) | CTR | 200 | - | 400 | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio (PC817D) | CTR | 300 | - | 600 | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio (PC817X) | CTR | 100 | - | 200 | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio (PC817Y) | CTR | 150 | - | 300 | % | IF = 5mA ,VCE = 5V |
| Collector-Emitter saturation voltage | VCE(sat) | - | 0.1 - 0.2 | V | IF = 20mA ,IC = 1mA | |
| Isolation resistance | RIO | 51010 | - | - | VIO = 500Vdc, 40~60% R.H. | |
| Floating capacitance | CIO | - | 0.6 - 1.0 | pF | VIO = 0, f = 1MHz | |
| Cut-off frequency | fc | - | 80 | - | kHz | VCE = 5V, IC = 2mA RL = 100, -3dB |
| Rise time | tr | - | - | 18 | s | VCE = 2V, IC = 2mA, RL = 100 |
| Fall time | tf | - | - | 18 | s | VCE = 2V, IC = 2mA, RL = 100 |
2401261513_KTP-PC817C_C20612449.pdf
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