High Isolation Voltage Photocoupler KTP PC817-C-F-AW KTP with Gallium Arsenide Emitter Technology
Key Attributes
Model Number:
PC817-C-F-AW(KTP)
Product Custom Attributes
Fall Time:
3us
Output Current:
50mA
Rise Time:
4us
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;400%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
PC817-C-F-AW(KTP)
Package:
DIP-4
Product Description
Product Description
The PC817 is a photocoupler consisting of a Gallium Arsenide (GaAs) emitter and an NPN transistor. It is packaged in a 4-pin DIP package and is available with wide lead spacing and SMD options. This device offers high isolation voltage, fast response times, and operation up to +110C.
Product Attributes
- Brand: KTP Semiconductor
- Certifications: Pb free and RoHS compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Condition |
| Absolute Maximum Ratings (Ta=25) | ||||||
| Forward current | IF | 60 | mA | |||
| Peak forward current | IFP | 1 | A | (100us pulse, 100Hz frequency) | ||
| Reverse voltage | VR | 6 | V | |||
| Input Power | PD | 100 | mW | |||
| Collector current | IC | 50 | mA | |||
| Collector and emitter Voltage | VCEO | 80 | V | |||
| Emitter and Collector Voltage | VECO | 6 | V | |||
| Output Power | PC | 150 | mW | |||
| Total Consume Power | PTOT | 200 | mW | |||
| Isolation Voltage | Viso | 5000 | Vrms | AC for 1 minute, R.H.= 40 ~ 60% R.H. Pins 1&2 shorted, 3&4 shorted. | ||
| Operating temperature | TOPR | -55 | +110 | |||
| Storage temperature | TSTG | -55 | +125 | |||
| Soldering temperature | TSOL | 260 | (10 seconds) | |||
| Electrical Characteristics (Ta=25 unless specified otherwise) | ||||||
| Forward voltage | VF | 1.2 | 1.4 | V | IF=20mA | |
| Reverse current | IR | 10 | A | VR=4V | ||
| Input capacitance | Cin | 30 | 250 | pF | V=0, f=1kHz | |
| Collector-Emitter dark current | ICEO | 100 | nA | VCE=20V, IF =0mA | ||
| Collector-Emitter breakdown voltage | VCEO | 80 | V | IC=0.1mA, IF=0mA | ||
| Emitter-Collector breakdown voltage | VECO | 6 | V | IE=0.1mA, IF=0mA | ||
| Collector-Emitter saturation voltage | VCE(sat) | 0.1 | 0.2 | V | IF=20mA, IC=1mA | |
| Current transfer ratio | CTR | 50 | 600 | % | IF=5mA, VCE=5V | |
| Collector Current | IC | 2.5 | 30 | mA | IF=5mA, VCE=5V | |
| Isolation resistance | RISO | 51010 | 11012 | VIO=500Vdc, 40~60% R.H. | ||
| Floating capacitance | Cf | 0.6 | 1.0 | pF | VIO=0, f=1MHz | |
| Cut-off frequency | fc | 80 | kHz | VCE=5V, IC=2mA, RL=100, -3dB | ||
| Rise time | tr | 4 | 18 | s | VCE=2V, IC=2mA, RL=100 | |
| Fall time | tf | 3 | 18 | s | VCE=2V, IC=2mA, RL=100 | |
| Transfer Characteristics Level Table (Ta=25 unless specified otherwise) | ||||||
| Current Transfer Ratio | CTR | 50 | 600 | % | IF=5mA, VCE=5V | |
| PC817L | 50 | 100 | ||||
| PC817A | 80 | 160 | ||||
| PC817B | 130 | 260 | ||||
| PC817C | 200 | 400 | ||||
| PC817D | 300 | 600 | ||||
| PC817X | 100 | 200 | ||||
| PC817Y | 150 | 300 | ||||
2508201940_KTP-PC817-C-F-AW-KTP_C50380040.pdf
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