Infrared emitting diode and phototransistor KTP PC357SC CX KTP optocoupler with compact 2 mm profile

Key Attributes
Model Number: PC357SC-CX(KTP)
Product Custom Attributes
Rise Time:
3us
Output Current:
50mA
Fall Time:
4us
Vce Saturation(VCE(sat)):
100mV@10mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
600%;50%
Forward Current(If):
50mA
Pd - Power Dissipation:
200mW
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
PC357SC-CX(KTP)
Package:
SMD-4P
Product Description

Product Overview

The PC357 series devices are optocouplers consisting of an infrared emitting diode optically coupled to a phototransistor detector. Encapsulated in a green compound and packaged in a compact 4-pin SSOP with a 2.0 mm profile, these devices offer high isolation voltage and are Halogen-free, Pb-free, and RoHS compliant. They are ideal for applications such as DC-DC converters, programmable controllers, telecommunication equipment, and signal transmission between circuits of different potentials and impedance.

Product Attributes

  • Brand: KTP Semiconductor
  • Certifications: Halogens free (Br <900 ppm ,Cl <900 ppm , Br+Cl < 1500 ppm), Compliance with EU REACH, Pb free and RoHS compliant.
  • Package: 4 Pin SSOP with a 2.0 mm profile

Technical Specifications

ParameterSymbolPC357PC357APC357BPC357CPC357DPC357EPC357FUnitCondition
Input Characteristics
Forward voltageVF-1.21.4----VIF = 20mA
Reverse currentIR--10----µAVR = 4V
Input capacitanceCin-30250----pFV = 0, f = 1kHz
Output Characteristics
Collector-Emitter dark currentICEO--100----nAVCE = 20V, IF = 0mA
Collector-Emitter breakdown voltageBVCEO80------VIC = 0.1mA
Emitter-Collector breakdown voltageBVECO7------VIE = 0.1mA
Transfer Characteristics
Current Transfer ratioCTR50 - 60080 - 160130 - 260200 - 400300 - 600100 - 200150 - 300%IF = 5mA ,VCE = 5V
Collector-Emitter saturation voltageVCE(sat)-0.10.2----VIF = 10mA ,IC = 1mA
Isolation resistanceRIO5×1010------ΩVIO = 500Vdc, 40~60% R.H.
Floating capacitanceCIO-0.61.0----pFVIO = 0, f = 1MHz
Rise timetr-318----µsVCE = 2V, IC = 2mA, RL = 100 Ω
Fall timetf-418----µs
Absolute Maximum Ratings
Forward currentIF50mA
Peak forward current (1us, pulse)IFP1A
Reverse voltageVR6V
Power dissipationPD70mWDerating factor (above Ta = 90°C) 2.9 mW/°C
Output Power dissipationPC150mWDerating factor (above Ta = 70°C) 3.7 mW/°C
Collector currentIC50mA
Collector-Emitter voltageVCEO80V
Emitter-Collector voltageVECO7V
Total Power DissipationPTOT200mW
Isolation VoltageVISO3750VrmsAC for 1 minute, R.H.= 40 ~ 60% R.H.
Operating temperatureTOPR-55 ~ +110°C
Storage temperatureTSTG-55 ~ +125°C
Soldering TemperatureTsol260°CFor 10 seconds

2509051530_KTP-PC357SC-CX-KTP_C51883203.pdf

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