KTP TLP155 photocoupler featuring GaAlAs infrared LED and buffered push pull output for gate driving
Key Attributes
Model Number:
TLP155
Product Custom Attributes
Power Dissipation:
-
Output Current:
600mA
Operating Temperature:
-40℃~+100℃
Isolation Voltage(Vrms):
3.75kV
Propagation Delay(tpd):
200ns;200ns
Reverse Voltage:
5V
Load Type:
MOSFET;IGBT
Rise Time:
35ns
Voltage - Supply:
10V~30V
Fall Time:
15ns
Voltage - Forward(Vf):
1.57V
CMTI(kV/us):
20kV/us
Number Of Channels:
1
Mfr. Part #:
TLP155
Package:
SO-6
Product Description
Product Overview
The TLP155 is a gate driver photocoupler comprising a GaAlAs infrared LED and an integrated high-gain, high-speed photodetector. Packaged in SO6, it features an internal Faraday shield for 20kV/s common-mode transient immunity. This device is ideal for direct gate driving of IGBTs or power MOSFETs, offering buffered logic-type (push-pull) output with a peak output current of 0.6A.
Product Attributes
- Brand: KTP Semiconductor
- Package: SO6
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
| Maximum Ratings | ||||||
| Input Forward Current | IF | 20 | mA | |||
| Peak Transient Input Forward Current | IFPT | 1 | A | Pulse width 1s, 300pps | ||
| Input Power Dissipation | PD | 40 | mW | |||
| Input Junction Temperature | Tj | 125 | ||||
| Peak High-Level Output Current | IOPH | -0.6 | A | TA=-40 to 100 | ||
| Peak Low-Level Output Current | IOPL | 0.6 | A | TA=-40 to 100 | ||
| Output Voltage | VO | 35 | V | |||
| Supply Voltage | VCC | 35 | V | |||
| Output Power Dissipation | PO | 80 | mW | |||
| Output Junction Temperature | Tj | 125 | ||||
| Operating Temperature | Topr | -40 | 100 | |||
| Storage Temperature | Tstg | -55 | 125 | |||
| Lead Solder Temperature (10s) | Tsol | 260 | ||||
| Isolation Voltage (AC, 60s) | BVS | 3750 | Vrms | R.H.60% | ||
| Recommended Operating Conditions | ||||||
| Input Threshold Current (L/H) | IFLH | 10 | 15 | mA | ||
| Input Threshold Voltage (H/L) | VFHL | 0 | 0.8 | V | ||
| Supply Voltage | VCC | 10 | 30 | V | ||
| Peak High-Level Output Current | IOPH | -0.2 | A | |||
| Peak Low-Level Output Current | IOPL | 0.2 | A | |||
| Operating Temperature | Topr | -40 | 100 | |||
| Operating Frequency | f | 250 | kHz | |||
| Electrical Characteristics | ||||||
| Input Forward Voltage | VF | 1.40 | 1.57 | 1.80 | V | IF=10mA, TA=25 |
| Forward Voltage Temperature Coefficient | VF/TA | -1.8 | mV/ | IF=10mA | ||
| Input Reverse Current | IR | 10 | uA | VR=5V, TA=25 | ||
| Input Capacitance | Ct | 60 | pF | V=0V, f=1MHz, TA=25 | ||
| High-Level Output Voltage | VOH | 9.8 | 9.9 | V | IF=10mA, VCC=10V, IO=-100mA | |
| Low-Level Output Voltage | VOL | 0.06 | 0.2 | V | VF=0.8V, VCC=10V, IO=100mA | |
| High-Level Supply Current | ICCH | 1.7 | 3.0 | mA | IF=10mA, VCC=10 to 30V, VO=Open | |
| Low-Level Supply Current | ICCL | 2.1 | 3.0 | mA | IF=0mA, VCC=10 to 30V, VO=Open | |
| Input Threshold Current (L/H) | IFLH | 1.0 | 7.5 | mA | VCC=15V, VO>1V | |
| Input Threshold Voltage (H/L) | VFHL | 0.8 | V | VCC=15V, VO1V | ||
| Supply Voltage | VCC | 10 | 30 | V | ||
| Under Voltage Lockout Threshold+ | VUVLO+ | 7.9 | V | IF=10mA, VO>5V | ||
| Under Voltage Lockout Threshold- | VUVLO | 7 | V | IF=10mA, VO<5V | ||
| Under Voltage Lockout Hysteresis | UVLOHYS | 0.9 | V | |||
| Switching Characteristics | ||||||
| High-Level Propagation Delay | tPLH | 50 | 120 | 200 | ns | IF=010mA, VCC=20V, Rg=30, Cg=1nF |
| Low-Level Propagation Delay | tPHL | 50 | 120 | 200 | ns | IF=100mA, VCC=20V, Rg=30, Cg=1nF |
| Propagation Delay Skew | tpsk | -85 | 85 | ns | IF=010mA, VCC=20V, Rg=30, Cg=1nF | |
| Pulse Width Distortion | |tPHL-tPLH| | 5 | 50 | ns | IF=010mA, VCC=20V, Rg=30, Cg=1nF | |
| Output Rise Time | tR | 35 | ns | IF=010mA, VCC=20V, Rg=30, Cg=1nF | ||
| Output Fall Time | tF | 15 | ns | IF=100mA, VCC=20V, Rg=30, Cg=1nF | ||
| Common Mode Rejection High-Level | CMH | 20 | kV/s | VCM=1000VP-P, IF=10mA, VCC=20V, TA=25, VO(MIN)=16V | ||
| Common Mode Rejection Low-Level | CML | 20 | kV/s | VCM=1000VP-P, IF=0mA, VCC=20V, TA=25, VO(MAX)=1V | ||
Applications
- Plasma Display Panels (PDPs)
- Transistor Inverters
- MOSFET Gate Drivers
- IGBT Gate Drivers
Notes
- A 0.1F bypass capacitor must be connected between pins 4 and 6.
- When handling and assembling this device, take standard electrostatic discharge (ESD) precautions to prevent damage or degradation to the device.
2409280101_KTP-TLP155_C22436729.pdf
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