Photocoupler device JTD JTDPC817CS featuring infrared LED and phototransistor for electrical isolation
Key Attributes
Model Number:
JTDPC817CS
Product Custom Attributes
Fall Time:
3us
Output Current:
50mA
Rise Time:
4us
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
600%;50%
Forward Current(If):
50mA
Pd - Power Dissipation:
200mW
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
JTDPC817CS
Package:
SOP-4
Product Description
Product Overview
The JTDPC817CS is a photocoupler consisting of an infrared light-emitting diode and a phototransistor. It provides electrical isolation and signal transmission between different circuits, making it widely applicable in power supply equipment such as mobile phone chargers and home appliance power supplies.
Product Attributes
- Brand: JTDPC (implied from product code)
- Origin: China (implied from website domain www.szjtdsemi.com)
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Current Transfer Ratio (CTR) | CTR | IF=5mA, VCE=5V | 50% | 600% | % | |
| Input-Output Isolation Voltage | VISO | 5,000 | Vrms | |||
| Creepage Distance | >7.62 | mm | ||||
| Operating Temperature | Topr | -55 | +110 | C | ||
| Collector-Emitter Breakdown Voltage | BVCEO | IC=0.1mA, IF=0 | 80 | V | ||
| Absolute Maximum Ratings (Temperature=25C) | ||||||
| Forward Current | IF | 50 | mA | |||
| Reverse Voltage | VR | 6 | V | |||
| Power Dissipation (Input) | PD | 70 | mW | |||
| Collector-Emitter Voltage | VCEO | 80 | V | |||
| Emitter-Collector Voltage | VECO | 6 | V | |||
| Collector Current | IC | 50 | mA | |||
| Power Dissipation (Output) | PC | 180 | mW | |||
| Total Power Dissipation | Ptot | 200 | mW | |||
| Isolation Voltage | Viso | AC, 1 min | 5,000 | Vrms | ||
| Storage Temperature | Tstg | -55 | 125 | C | ||
| Soldering Temperature | Tsol | 10 sec | 260 | C | ||
| Electrical Characteristics (Temperature=25C) | ||||||
| Forward Voltage | VF | IF=20mA | 1.2 | 1.4 | V | |
| Reverse Current | IR | VR=4V | 10 | A | ||
| Terminal Capacitance | Ct | V=0, f=1MHz | 250 | pF | ||
| Collector Dark Current | ICEO | VCE=20V, IF=0 | 100 | nA | ||
| Collector-Emitter Breakdown Voltage | BVCEO | IC=0.1mA, IF=0 | 80 | V | ||
| Emitter-Collector Breakdown Voltage | BVECO | IE=10A, IF=0 | 6 | V | ||
| Collector Current | Ic | IF=5mA, VCE=5V | 2.5 | 30 | mA | |
| Current Conversion Ratio | CTR | IF=5mA, VCE=5V | 50 | 600 | % | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IF=20mA, IC=1mA | 0.1 | 0.2 | V | |
| Isolation Resistance | Riso | DC500V, 40~60%R.H. | 51010 | |||
| Floating Capacitance | Cf | V=0, f=1MHz | 0.6 | 1 | pF | |
| Cut-off Frequency | fc | VCE=5V, IC=2mA, RL=100, -3dB | 80 | kHz | ||
| Rise Time | tr | VCE=2V, IC=2mA, RL=100 | 4 | 18 | s | |
| Fall Time | tf | 3 | 18 | s | ||
| Current Transfer Ratio Rank Table (Temperature=25C) | ||||||
| Grade Sign | Min. (%) | Max. (%) | ||||
| L | 50 | 100 | ||||
| A | 80 | 160 | ||||
| B | 130 | 260 | ||||
| C | 200 | 400 | ||||
| D | 300 | 600 | ||||
| L or A or B or C or D | 50 | 600 | ||||
2507081835_JTD-JTDPC817CS_C49308276.pdf
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