control component HXY MOSFET HL3053S1 with GaAs infrared diode and monolithic silicon photo triac
Key Attributes
Model Number:
HL3053S1
Product Custom Attributes
Power Dissipation:
250mW
Operating Temperature:
-40℃~+110℃
Isolation Voltage(Vrms):
5kV
Static Dv/dt:
1000V/us
Output Current(It(rms)):
100mA
Forward Current:
50mA
Current - Surge(Itsm):
1A
Voltage - Forward(Vf):
1.2V
Number Of Terminals:
6
Mfr. Part #:
HL3053S1
Package:
SMD-6P
Product Description
Product Overview
The HL3053S1 series are GaAs infrared emitting diode optically coupled to a monolithic silicon non-zero voltage crossing photo triac. Designed for logic system interfaces, these devices are ideal for solid-state relays, industrial controls, motors, solenoids, and consumer appliances. They offer high input-output isolation voltage and high repetitive peak off-state voltage.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Values | Unit | Notes |
| Input Forward Current | IF | 50 | mA | |
| Reverse Voltage | VR | 6 | V | |
| Power Dissipation | P | 120 | mW | |
| Junction Temperature | TJ | 125 | Input | |
| Off-State Output Terminal Voltage | VDRM | 600 | V | Min. 600V |
| Peak Repetitive Surge Current | ITSM | 1 | A | (PW=1ms120 pps) |
| On-State RMS Current | IT(RMS) | 100 | mA | |
| Junction Temperature | TJ | 125 | Output | |
| Collector Power Dissipation | PC | 150 | mW | |
| Operating Temperature Range | Topr | 40 ~ 110 | ||
| Storage Temperature Range | Tstg | 55 ~ 125 | ||
| Total Power Consumption | P(W) | 250 | mW | |
| Isolation Voltage | VISO | 5000 | Vrms | (1). AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together. |
| Soldering Temperature | TSOL | 260 | C | (2).For 10 seconds |
| Input Forward Voltage | VF | 1.2 - 1.6 | V | IF=20mA |
| Reverse Current | VR | - 5 | A | VR=6V |
| Output Peak Blocking Current, Either Direction | IDRM | - 500 | nA | VDRM = Rated VDRM 1Test voltage must be applied within dv/dt rating. |
| Peak On-State Voltage, Either Direction | VTM | - 3 | V | ITM= 100mA |
| Peak Critical rate of Rise of Off-State Voltage | dv/dt | 1000 | V/s | Vin=240Vrms 2This is static dv/dt. Commutating dv/dt is a function of the load-driving thyristor(s) only. |
| Coupled LED Trigger Current, Current Required to Latch Output, Either Direction | IFT | - 5 | mA | Main Terminal Voltage = 3V |
| Holding Current, Either Direction | IH | 200 | uA |
2509181601_HXY-MOSFET-HL3053S1_C48783754.pdf
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