Industrial Control Photo Coupler HXY MOSFET HL3063S1 Featuring High Repetitive Peak Off State Voltage
Product Description
The HL3063S1 series of devices are photo couplers, each comprising a GaAs infrared emitting diode optically coupled to a monolithic silicon zero voltage crossing photo triac. They are designed for use with discrete power triacs in logic system interfaces, including solid-state relays, industrial controls, motors, solenoids, and consumer appliances. Key advantages include high input-output isolation voltage (Viso = 5,000Vrms), high repetitive peak off-state voltage (VDRM min. 600V), and a high critical rate of rise of off-state voltage (dv/dt min. 1000V/s). The operating temperature range is -40 to 110.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Model: HL3063S1
- Certifications: RoHS
- Origin: Shenzhen, China
Technical Specifications
| Parameter | Symbol | Unit | Min. | Typ. | Max. | Notes |
| Maximum Ratings | ||||||
| Input Forward Current | IF | mA | 50 | |||
| Reverse Voltage | VR | V | 6 | |||
| Power Dissipation | P | mW | 120 | |||
| Junction Temperature | TJ | 125 | ||||
| Output Off-State Output Terminal Voltage | VDRM | V | 600 | |||
| Peak Repetitive Surge Current (PW=1ms, 120 pps) | ITSM | A | 1 | |||
| On-State RMS Current | IT(RMS) | mA | 100 | |||
| Junction Temperature | TJ | 125 | ||||
| Collector Power Dissipation | PC | mW | 150 | |||
| Operating temperature range | Topr | C | -40 | 110 | ||
| Storage temperature range | Tstg | C | -55 | 125 | ||
| Total Power consumption | P(W) | mW | 250 | |||
| Isolation Voltage | VISO | Vrms | 5000 | (1) AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together. | ||
| Electronic Optical Characteristics (TA = 25C) | ||||||
| Input Forward Voltage | VF | V | 1.2 | 1.4 | IF=20mA | |
| Reverse Current | VR | A | 5 | VR=6V | ||
| Output Peak Blocking Current, Either Direction | IDRM | nA | 500 | (1) VDRM = Rated VDRM | ||
| Peak On-State Voltage, Either Direction | VTM | V | 3 | ITM= 100mA | ||
| Peak Critical rate of Rise of Off-State Voltage | dv/dt | V/s | 1000 | - | - | (2) This is static dv/dt. Commutating dv/dt is a function of the load-driving thyristor(s) only. |
| Coupled Led Trigger Current, Current Required to Latch Output,Either Direction | IFT | mA | - | 15 | Main Terminal Voltage = 3V | |
| Holding Current, Either Direction | IH | A | - | 400 | - | |
| Inhibit Voltage | VINH | Volts | 5 | 20 | IF=Rated IFT,MT1- MT2 Voltage above which device will not trigger. | |
| Leakage in Inhibited State | IDRM2 | A | - | 500 | IF= Rated IFT , Rated VDRM, Off State | |
2509181601_HXY-MOSFET-HL3063S1_C48783755.pdf
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