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quality HopeRF Micro electronics CMT8042W1 digital isolator featuring low output level default for power loss factory
quality HopeRF Micro electronics CMT8042W1 digital isolator featuring low output level default for power loss factory
quality HopeRF Micro electronics CMT8042W1 digital isolator featuring low output level default for power loss factory
quality HopeRF Micro electronics CMT8042W1 digital isolator featuring low output level default for power loss factory

HopeRF Micro electronics CMT8042W1 digital isolator featuring low output level default for power loss

Key Attributes
Model Number: CMT8042W1
Product Custom Attributes
CMTI(kV/us):
200kV/us
Voltage - Supply:
2.5V~5.5V;2.5V~5.5V
Propagation Delay(tpd):
9ns
Default Output:
High Level
Number Of Forward Channels:
2
Number Of Reverse Channels:
2
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
CMT8042W1
Package:
SOIC-16-WB
Product Description

Product Overview

The CMT804X is a high-performance, quad-channel digital isolator utilizing silicon dioxide (SiO2) insulation to support up to 5 kVrms isolation voltage. It facilitates communication between two different power domains, preventing noise currents from entering local grounds or interfering with sensitive circuits. The device features an enable pin for high-impedance output in multi-master applications, reducing power consumption. It offers up to four forward and two backward channels. The CMT804X1 defaults to a high output level and the CMT804X0 defaults to a low output level upon loss of power or signal. With innovative chip design and layout, the CMT804X series achieves high electromagnetic immunity and low radiation, meeting system-level ESD, EFT, surge, and radiation compliance requirements. It is available in both SOIC-16 wide and narrow body packages.

Product Attributes

  • Brand: HOPERF
  • Certifications: DIN VDE V 0884-11: 2017-01, UL 1577, CSA (IEC 60950-1, IEC 62368-1, IEC 61010-1, IEC 60601-1), CQC (GB4943.1-2022), TUV (EN 60950-1, EN 62368-1, EN 61010-1)
  • Material: Silicon Dioxide (SiO2) Insulation Barrier
  • Origin: www.hoperf.cn

Technical Specifications

ParameterSymbolConditionMinTypicalMaxUnit
Absolute Maximum Ratings
Power Supply VoltageVDD1, VDD2-0.56V
Maximum Input VoltageINx, EN1, EN2x = A, B, C, D-0.4VDD+0.4V
Maximum Output VoltageOUTxx = A, B, C, D-0.4VDD+0.4V
Maximum Input/Output Pulse VoltagePulse width <100 ns, duty cycle <10%-0.8VDD+0.8V
Transient Common Mode RejectionCMTI200kV/us
Output CurrentIO-1515mA
Maximum Surge Immunity8kV
Operating TemperatureTA-40125
Storage TemperatureTSTG-40150
Recommended Operating Conditions
Power Supply VoltageVDD1, VDD22.555.5V
High Level Input VoltageVIHVDDI: Input side VDD2VDDIV
Low Level Input VoltageVILVDDI: Input side VDD00.8V
Data RateDR0150Mbps
Operating TemperatureTA-4025125
Junction TemperatureTJ-40150
ESD Ratings
Electrostatic DischargeVESDHuman Body Model (HBM)8000V
Charged Device Model (CDM)2000V
General Specifications
Isolation RatingVRMS5kV
Expected Lifetime>40Years
Typical Propagation Delay(Powered by 5V)9ns
Current Consumption (per channel @ 1 Mbps)1.5mA
Package Information
Package TypeSOIC-16 (Wide and Narrow)
Dimensions (Narrow)9.903.90mm
Dimensions (Wide)10.307.50mm

Applications

  • Industrial Automation
  • New Energy Vehicles
  • Photovoltaic Inverters
  • Motor Control
  • Isolated SPI
  • General-Purpose Multi-Channel Isolation

2508011705_HopeRF-Micro-electronics-CMT8042W1_C32713197.pdf

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