Silicon dioxide insulated dual channel digital isolator HopeRF Micro-electronics CMT8121W0 for industrial
Key Attributes
Model Number:
CMT8121W0
Product Custom Attributes
CMTI(kV/us):
200kV/us
Voltage - Supply:
2.5V~5.5V;2.5V~5.5V
Propagation Delay(tpd):
9ns
Default Output:
Low Level
Number Of Forward Channels:
1
Number Of Reverse Channels:
1
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
CMT8121W0
Package:
SOIC-8-WB
Product Description
Product Overview
The CMT812X is a high-performance, dual-channel digital isolator utilizing silicon dioxide (SiO2) insulation. It supports isolation voltages up to 5 kVrms and is designed for communication between two different power domains, preventing noise currents from affecting sensitive local ground or circuits. The CMT812X series offers enhanced electromagnetic compatibility (EMC) with system-level ESD, EFT, and surge immunity, as well as low radiation. It is available in SOIC-16 wide body, SOW8L wide body, and SOIC-8 narrow body packages.
Product Attributes
- Brand: HOPERF (implied from www.hoperf.cn)
- Certifications: DIN VDE V 0884-11: 2017-01, UL 1577 Component Certification, CSA Certification (IEC 60950-1, IEC 62368-1, IEC 61010-1, IEC 60601-1), CQC Certification (GB4943.1-2022), TUV Certification (EN 60950-1, EN 62368-1, EN 61010-1)
- Material: Silicon Dioxide (SiO2) insulation
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Data Rate | DR | DC | 150 | Mbps | ||
| Supply Voltage Range | VDD1, VDD2 | 2.5 | 5.5 | V | ||
| Operating Temperature Range | TA | -40 | 125 | C | ||
| Isolation Rating | RMS | 5 | kVRMS | |||
| Surge Capability | 8 | kV | ||||
| Typical CMTI | CMTI | 200 | kV/s | |||
| Low Power Consumption | @ 1 Mbps per channel | 1.5 | mA | |||
| Low Propagation Delay | @ 5V supply | 9 | ns | |||
| ESD (HBM) | VESD | Human Body Model | 8000 | V | ||
| ESD (CDM) | VESD | Component Charge Model | 2000 | V | ||
| Absolute Max Supply Voltage | VDD1, VDD2 | -0.5 | 6.5 | V | ||
| Absolute Max Input Voltage | INx | -0.4 | VDD+0.4 | V | ||
| Absolute Max Output Voltage | OUTx | -0.4 | VDD+0.4 | V | ||
| Absolute Max Input/Output Pulse Voltage | Pulse width < 100 ns, duty cycle < 10% | -0.8 | VDD+0.8 | V | ||
| Absolute Max Output Current | IO | -15 | 15 | mA | ||
| Absolute Max Storage Temperature | TSTG | -40 | 150 | C | ||
| Recommended Operating Supply Voltage | VDD1, VDD2 | 2.5 | 5 | V | ||
| Recommended High Level Input Voltage | VIH | VDDI: Input side VDD | 0.7*VDD | V | ||
| Recommended Low Level Input Voltage | VIL | VDDI: Input side VDD | 0 | 0.3VDD | V | |
| Recommended Operating Temperature | TA | -40 | 125 | C | ||
| Recommended Junction Temperature | TJ | -40 | 150 | C |
Package Information
| Chip Model | Package | Dimensions (mm x mm) |
| CMT812X | NB(N) SOIC-8 Narrow Body | 4.9 x 3.9 |
| CMT812X | WB(W) SOW8L Wide Body | 5.85 x 7.5 |
| CMT812X | WB(W) SOIC-16 Wide Body | 10.4 x 7.5 |
2508011705_HopeRF-Micro-electronics-CMT8121W0_C32713182.pdf
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