dual channel digital isolator HopeRF Micro-electronics CMT8122W0 with 5 kVrms isolation and surge protection
Product Overview
The CMT812X series are high-performance, dual-channel digital isolators utilizing silicon dioxide (SiO2) isolation barriers, supporting up to 5 kVrms isolation voltage. These isolators facilitate communication between two different power domains, preventing noise currents from entering local grounds or interfering with sensitive circuits. The CMT812X offers two channels, with CMT812X1 featuring a default high output and CMT812X0 a default low output. They provide excellent electromagnetic compatibility (EMC) with low power consumption and low radiation, meeting system-level ESD, EFT, surge, and radiation compliance requirements through innovative chip design and layout. Available in SOIC-16 wide body, SOW8L wide body, and SOIC-8 narrow body packages.
Product Attributes
- Brand: HOPERF
- Origin: China (implied by www.hoperf.cn)
- Material: Silicon Dioxide (SiO2) isolation barrier
- Certifications: DIN VDE V 0884-11: 2017-01, UL 1577 Component Certification, CSA Certification (IEC 60950-1, IEC 62368-1, IEC 61010-1, IEC 60601-1), CQC Certification (GB4943.1-2022), TUV Certification (EN 60950-1, EN 62368-1, EN 61010-1)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Specifications | ||||||
| Data Rate | DR | DC to 150 Mbps | DC | - | 150 | Mbps |
| Supply Voltage Range | VDD1, VDD2 | 2.5 | - | 5.5 | V | |
| Operating Temperature Range | TA | -40 | - | 125 | C | |
| Isolation Rating | RMS | - | 5 | - | kVRMS | |
| Surge Capability | - | 8 | - | kV | ||
| Typical Common-Mode Transient Immunity (CMTI) | - | 200 | - | kV/s | ||
| Low Power Consumption | At 1 Mbps, per channel | - | 1.5 | - | mA | |
| Low Propagation Delay | With 5V supply | - | 9 | - | ns | |
| Safety Related Certifications | ||||||
| DIN VDE Standard | V 0884-11: 2017-01 | - | - | - | - | |
| UL Certification | 1577 Component Certification | - | - | - | - | |
| CSA Certification | IEC 60950-1, IEC 62368-1, IEC 61010-1, IEC 60601-1 Terminal Equipment Standards | - | - | - | - | |
| CQC Certification | GB4943.1-2022 | - | - | - | - | |
| TUV Certification | EN 60950-1, EN 62368-1, EN 61010-1 | - | - | - | - | |
| Electromagnetic Compatibility (EMC) | ||||||
| System Level Immunity | ESD, EFT, Surge | - | - | - | - | |
| Contact Discharge Protection (across isolation barrier) | IEC 61000-4-2 | 8 | - | - | kV | |
| Radiation | Low | - | - | - | - | |
| Absolute Maximum Ratings | ||||||
| Supply Voltage | VDD1, VDD2 | -0.5 | - | 6.5 | V | |
| Maximum Input Voltage | INx | -0.4 | - | VDD+0.4 | V | |
| Maximum Output Voltage | OUTx | -0.4 | - | VDD+0.4 | V | |
| Maximum Input/Output Pulse Voltage | Pulse width < 100 ns, duty cycle < 10% | -0.8 | - | VDD+0.8 | V | |
| Storage Temperature | TSTG | -40 | - | 150 | C | |
| Recommended Operating Conditions | ||||||
| High Level Input Voltage | VIH | VDDI: Input side VDD | 0.7*VDD | - | VDDI | V |
| Low Level Input Voltage | VIL | VDDI: Input side VDD | 0 | - | 0.3VDD | V |
| Junction Temperature | TJ | -40 | - | 150 | C | |
| ESD Ratings | ||||||
| Electrostatic Discharge (HBM) | VESD | Human Body Model | 8000 | - | - | V |
| Component Charging Mode (CDM) | 2000 | - | - | V | ||
| Package Information | ||||||
| Chip Model | Package | Dimensions (mm x mm) | - | - | - | - |
| CMT812X | NB(N) SOIC-8 Narrow Body | 4.9 x 3.9 | - | - | - | - |
| CMT812X | WB(W) SOW8L Wide Body | 5.85 x 7.5 | - | - | - | - |
| CMT812X | WB(W) SOIC-16 Wide Body | 10.4 x 7.5 | - | - | - | - |
Applications
- Industrial Automation
- New Energy Vehicles
- Photovoltaic Inverters
- Motor Control
- Isolated SPI
- General-Purpose Multi-Channel Isolation
2508011705_HopeRF-Micro-electronics-CMT8122W0_C32713184.pdf
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