Industrial Control Infrared Emitting Diode HENGTUO HT-3082-S1TA1 with GaAs Technology and High Isolation Voltage

Key Attributes
Model Number: HT-3082-S1TA1
Product Custom Attributes
Number Of Channels:
1
Operating Temperature:
-40℃~+110℃
Isolation Voltage(Vrms):
5kV
Static Dv/dt:
1000V/us
Output Current(It(rms)):
100mA
Forward Current:
50mA
Load Voltage:
800V
Output Type:
TRIAC
Voltage - Forward(Vf):
1.2V
Zero Crossing Circuit:
Yes
Mfr. Part #:
HT-3082-S1TA1
Package:
SMD-6P
Product Description

Product Overview

The HT-304X_306X_308X series of devices are GaAs infrared emitting diodes optically coupled to a monolithic silicon zero voltage crossing photo triac. Designed for interface logic systems, they are ideal for solid-state relays, industrial controls, motors, solenoids, and consumer appliances. Key advantages include high input-output isolation voltage (5,000Vrms), high repetitive peak off-state voltage, and a high critical rate of rise of off-state voltage.

Product Attributes

  • Brand: Hengtuo Technology Co., LTD.
  • Certifications: UL approved, VDE approved, CQC approved
  • Compliance: RoHS, MSL1

Technical Specifications

ParameterSymbolHT-304XHT-306XHT-308XUnitCondition
Input Forward CurrentIFmAIF=20mA
Reverse CurrentVRAVR=6V
Output Off-State Output Terminal VoltageVDRM400600800V
Peak Repetitive Surge CurrentITSMAPW=1ms, 120 pps
On-State RMS CurrentIT(RMS)mA
Couple Led Trigger CurrentIFT15105mAMain Terminal Voltage = 3V
Holding CurrentIHuA
Isolation VoltageVISO500050005000VrmsAC for 1 minute, R.H.= 40 ~ 60% R.H.
Operating TemperatureTopr-40 ~ 110-40 ~ 110-40 ~ 110C
Storage TemperatureTstg-55 ~ 125-55 ~ 125-55 ~ 125C
Peak Critical rate of Rise of Off-State Voltagedv/dt100010001000V/sVin=240Vrms

2410281616_HENGTUO-HT-3082-S1TA1_C34376236.pdf

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