Industrial Control Infrared Emitting Diode HENGTUO HT-3082-S1TA1 with GaAs Technology and High Isolation Voltage
Product Overview
The HT-304X_306X_308X series of devices are GaAs infrared emitting diodes optically coupled to a monolithic silicon zero voltage crossing photo triac. Designed for interface logic systems, they are ideal for solid-state relays, industrial controls, motors, solenoids, and consumer appliances. Key advantages include high input-output isolation voltage (5,000Vrms), high repetitive peak off-state voltage, and a high critical rate of rise of off-state voltage.
Product Attributes
- Brand: Hengtuo Technology Co., LTD.
- Certifications: UL approved, VDE approved, CQC approved
- Compliance: RoHS, MSL1
Technical Specifications
| Parameter | Symbol | HT-304X | HT-306X | HT-308X | Unit | Condition |
|---|---|---|---|---|---|---|
| Input Forward Current | IF | mA | IF=20mA | |||
| Reverse Current | VR | A | VR=6V | |||
| Output Off-State Output Terminal Voltage | VDRM | 400 | 600 | 800 | V | |
| Peak Repetitive Surge Current | ITSM | A | PW=1ms, 120 pps | |||
| On-State RMS Current | IT(RMS) | mA | ||||
| Couple Led Trigger Current | IFT | 15 | 10 | 5 | mA | Main Terminal Voltage = 3V |
| Holding Current | IH | uA | ||||
| Isolation Voltage | VISO | 5000 | 5000 | 5000 | Vrms | AC for 1 minute, R.H.= 40 ~ 60% R.H. |
| Operating Temperature | Topr | -40 ~ 110 | -40 ~ 110 | -40 ~ 110 | C | |
| Storage Temperature | Tstg | -55 ~ 125 | -55 ~ 125 | -55 ~ 125 | C | |
| Peak Critical rate of Rise of Off-State Voltage | dv/dt | 1000 | 1000 | 1000 | V/s | Vin=240Vrms |
2410281616_HENGTUO-HT-3082-S1TA1_C34376236.pdf
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