High isolation voltage GUOXIN JIAPIN SEMICONDUCTOR GX817B photocoupler with wide lead spacing and global safety approvals
Key Attributes
Model Number:
GX817B
Product Custom Attributes
Output Current:
50mA
Fall Time:
18us
Rise Time:
18us@2mA,100Ω
Vce Saturation(VCE(sat)):
100mV@1mA,20mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current Transfer Ratio:
130%;260%
Forward Current(If):
60mA
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
GX817B
Package:
DIP-4
Product Description
Product Overview
The GX817 series phototransistor photocoupler features an infrared emitting diode optically coupled to a phototransistor detector. Packaged in a 4-pin DIP, it offers high isolation voltage (5000Vrms), wide creepage distance (>7.62mm), and an operating temperature up to 110C. It is Halogen-Free (copper leadframe only) and compliant with EU REACH, with UL, cUL, VDE, SEMKO, NEMKO, DEMKO, FIMKO, and CQC approvals. Available in wide-lead spacing and SMD options, it is suitable for signal transmission between circuits of different potentials and impedances.
Product Attributes
- Brand: Guo Xin Jia Pin SEMICONDUTOR (GXJP)
- Origin: China
- Certifications: UL, cUL (No.E214129), VDE (No. 132249), SEMKO, NEMKO, DEMKO, FIMKO, CQC
- Compliance: Halogen Free (copper leadframe), EU REACH, RoHS
Technical Specifications
| Parameter | Symbol | GX817 | GX817A | GX817B | GX817C | GX817D | GX817X | GX817Y | Unit | Condition |
|---|---|---|---|---|---|---|---|---|---|---|
| Current Transfer Ratio (CTR) | CTR | 50~600 | 80~160 | 130~260 | 200~400 | 300~600 | 100~200 | 150~300 | % | IF = 5mA, VCE = 5V |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | - | - | - | - | - | V | IF = 20mA, IC = 1mA |
| Isolation Voltage | VISO | 5000 | - | - | - | - | - | - | Vrms | AC for 1 minute, R.H.= 40~60% |
| Operating Temperature | TOPR | -55 to 110 | - | - | - | - | - | - | C | - |
| Storage Temperature | TSTG | -55 to 125 | - | - | - | - | - | - | C | - |
| Forward Voltage | VF | - | - | - | - | - | - | - | V | IF = 20mA |
| Collector Current | IC | - | - | - | - | - | - | - | mA | - |
| Collector-Emitter Voltage | VCEO | - | - | - | - | - | - | - | V | - |
| Input Forward Current | IF | - | - | - | - | - | - | - | mA | - |
| Collector-Emitter Dark Current | ICEO | - | - | - | - | - | - | - | nA | VCE = 20V, IF = 0mA |
| Isolation Resistance | RIO | 51010 | - | - | - | - | - | - | VIO = 500Vdc, 40~60% R.H. | |
| Cut-off Frequency | fc | - | - | - | - | - | - | - | kHz | VCE = 5V, IC = 2mA, RL = 100, -3dB |
| Rise Time | tr | - | - | - | - | - | - | - | s | VCE = 2V, IC = 2mA, RL = 100 |
| Fall Time | tf | - | - | - | - | - | - | - | s | VCE = 2V, IC = 2mA, RL = 100 |
2410121632_GUOXIN-JIAPIN-SEMICONDUCTOR-GX817B_C2684621.pdf
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