phototransistor photocoupler GUOXIN JIAPIN SEMICONDUCTOR GX817C with UL cUL VDE and RoHS certifications
Key Attributes
Model Number:
GX817C
Product Custom Attributes
Output Current:
50mA
Fall Time:
18us
Rise Time:
18us
Vce Saturation(VCE(sat)):
200mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;400%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
GX817C
Package:
DIP-4
Product Description
Product Overview
The GX817 series phototransistor photocoupler features an infrared emitting diode optically coupled to a phototransistor detector, housed in a compact 4-pin DIP package. It offers high isolation voltage, compliance with Halogen-Free standards, and a wide operating temperature range. Available in various lead spacing and SMD options, this series is suitable for signal transmission between circuits of different potentials and impedances.
Product Attributes
- Brand: Guo Xin Jia Pin SEMICONDUTOR (GXJP)
- Origin: China
- Certifications: UL, cUL (No.E214129), VDE (No. 132249), SEMKO, NEMKO, DEMKO, FIMKO, CQC
- Compliance: Halogens Free, EU REACH, RoHS
Technical Specifications
| Parameter | Symbol | GX817 | GX817A | GX817B | GX817C | GX817D | GX817X | GX817Y | Unit | Condition | |
| Current Transfer Ratio (CTR) | CTR | 50~600 | 80~160 | 130~260 | 200~400 | 300~600 | 100~200 | 150~300 | % | IF = 5mA, VCE = 5V | |
| Isolation Voltage | VISO | 5000 | Vrms | AC for 1 minute, R.H.= 40 ~ 60% | |||||||
| Operating Temperature | TOPR | -55 to 110 | C | ||||||||
| Storage Temperature | TSTG | -55 to 125 | C | ||||||||
| Forward Voltage | VF | -1.2 ~ 1.4 | V | IF = 20mA | |||||||
| Collector-Emitter dark current | ICEO | - ~ 100 | nA | VCE = 20V, IF = 0mA | |||||||
| Collector-Emitter breakdown voltage | BVCEO | 35 | - | V | IC = 0.1mA | ||||||
| Collector-Emitter saturation voltage | VCE(sat) | -0.1 ~ 0.2 | V | IF = 20mA ,IC = 1mA | |||||||
| Cut-off frequency | fc | -80 ~ - | kHz | VCE = 5V, IC = 2mA, RL = 100, -3dB | |||||||
| Rise time | tr | - ~ 18 | s | VCE = 2V, IC = 2mA, RL = 100 | |||||||
| Fall time | tf | - ~ 18 | s | VCE = 2V, IC = 2mA, RL = 100 | |||||||
2410121632_GUOXIN-JIAPIN-SEMICONDUCTOR-GX817C_C2684622.pdf
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