signal transmission device GUOXIN JIAPIN SEMICONDUCTOR GX817MC with halogen free copper leadframe and UL approvals
Product Overview
The GX817 series phototransistor photocouplers feature an infrared emitting diode optically coupled to a phototransistor detector. Housed in a compact 4-pin DIP package, these devices offer high isolation voltage (5000Vrms), excellent creepage distance (>7.62mm), and operation up to 110C. They are Halogen-Free (copper leadframe), RoHS compliant, and meet EU REACH standards. Available in wide-lead spacing and SMD options, the GX817 series is ideal for signal transmission between circuits of different potentials and impedances in applications such as programmable controllers, system appliances, telecommunication equipment, and home appliances.
Product Attributes
- Brand: Guo Xin Jia Pin SEMICONDUTOR (GXJP)
- Origin: China
- Certifications: UL and cUL approved (No.E214129), VDE approved (No. 132249), SEMKO approved, NEMKO approved, DEMKO approved, FIMKO approved, CQC approved
- Compliance: Halogens Free, RoHS compliant, EU REACH
Technical Specifications
| Parameter | Symbol | GX817 | GX817A | GX817B | GX817C | GX817D | GX817X | GX817Y | Unit | Condition |
| Absolute Maximum Ratings | ||||||||||
| Input Forward current | IF | 60 | mA | Ta=25 | ||||||
| Peak forward current (1us, pulse) | IFP | 1 | A | Ta=25 | ||||||
| Reverse voltage | VR | 6 | V | Ta=25 | ||||||
| Input Power dissipation | PD | 100 | mW | Ta=25 | ||||||
| Input Power dissipation Derating factor (above Ta = 100C) | 2.9 | mW/C | Ta=25 | |||||||
| Output Power dissipation | PC | 150 | mW | Ta=25 | ||||||
| Output Power dissipation Derating factor (above Ta = 100C) | 5.8 | mW/C | Ta=25 | |||||||
| Collector current | IC | 50 | mA | Ta=25 | ||||||
| Collector-Emitter voltage | VCEO | 35 | V | Ta=25 | ||||||
| Emitter-Collector voltage | VECO | 6 | V | Ta=25 | ||||||
| Total Power Dissipation | PTOT | 200 | mW | Ta=25 | ||||||
| Isolation Voltage*1 | VISO | 5000 | V rms | AC for 1 minute, R.H.= 40 ~ 60% R.H. | ||||||
| Operating Temperature | TOPR | -55 to 110 | C | |||||||
| Storage Temperature | TSTG | -55 to 125 | C | |||||||
| Soldering Temperature*2 | TSOL | 260 | C | For 10 seconds | ||||||
| Electro-Optical Characteristics | ||||||||||
| Forward Voltage | VF | - | 1.2 | 1.4 | - | - | - | - | V | IF = 20mA |
| Reverse Current | IR | - | - | 10 | - | - | - | - | A | VR = 4V |
| Input capacitance | Cin | - | 30 | 250 | - | - | - | - | pF | V = 0, f = 1kHz |
| Collector-Emitter dark current | ICEO | - | - | 100 | - | - | - | - | nA | VCE = 20V, IF = 0mA |
| Collector-Emitter breakdown voltage | BVCEO | 35 | - | - | - | - | - | - | V | IC = 0.1mA |
| Emitter-Collector breakdown voltage | BVECO | 6 | - | - | - | - | - | - | V | IE = 0.1mA |
| Current Transfer ratio | CTR | 50 | - | 600 | 80 | 130 | 200 | 300 | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio | CTR | - | - | - | - | - | 400 | 600 | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio | CTR | - | 100 | - | - | - | - | - | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio | CTR | - | 150 | - | - | - | - | - | % | IF = 5mA ,VCE = 5V |
| Collector-Emitter saturation voltage | VCE(sat) | - | 0.1 | 0.2 | - | - | - | - | V | IF = 20mA ,IC = 1mA |
| Isolation resistance | RIO | 51010 | - | - | - | - | - | - | VIO = 500Vdc, 40~60% R.H. | |
| Floating capacitance | CIO | - | 0.6 | 1.0 | - | - | - | - | pF | VIO = 0, f = 1MHz |
| Cut-off frequency | fc | - | 80 | - | - | - | - | - | kHz | VCE = 5V, IC = 2mA RL = 100, -3dB |
| Rise time | tr | - | - | 18 | - | - | - | - | s | VCE = 2V, IC = 2mA, RL = 100 |
| Fall time | tf | - | - | 18 | - | - | - | - | s | VCE = 2V, IC = 2mA, RL = 100 |
2410121632_GUOXIN-JIAPIN-SEMICONDUCTOR-GX817MC_C2684623.pdf
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