GUOXIN JIAPIN SEMICONDUCTOR GX817C S photocoupler with wide creepage distance and 4 pin DIP package
Key Attributes
Model Number:
GX817C-S
Product Custom Attributes
Output Current:
50mA
Fall Time:
18us
Rise Time:
18us
Vce Saturation(VCE(sat)):
200mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;400%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
GX817C-S
Package:
SOP-4-2.54mm
Product Description
Product Overview
The GX817 series phototransistor photocoupler features an infrared emitting diode optically coupled to a phototransistor detector, housed in a compact 4-pin DIP package. It offers high isolation voltage, wide creepage distance, and an extended operating temperature range. Available in wide-lead spacing and SMD options, it is suitable for signal transmission between circuits of different potentials and impedances.
Product Attributes
- Brand: Guo Xin Jia Pin SEMICONDUTOR (GXJP)
- Origin: China
- Certifications: UL, cUL (No.E214129), VDE (No. 132249), SEMKO, NEMKO, DEMKO, FIMKO, CQC
- Compliance: Halogen Free (copper leadframe only), RoHS compliant, EU REACH
Technical Specifications
| Parameter | Symbol | GX817 | GX817A | GX817B | GX817C | GX817D | GX817X | GX817Y | Unit | Condition |
|---|---|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||||||
| Input Forward current | IF | 60 | mA | Ta=25 | ||||||
| Peak forward current (1us, pulse) | IFP | 1 | A | Ta=25 | ||||||
| Reverse voltage | VR | 6 | V | Ta=25 | ||||||
| Power dissipation | PD | 100 | mW | Ta=25 | ||||||
| Power dissipation Derating factor (above Ta = 100C) | 2.9 | mW/C | Ta=25 | |||||||
| Output Power dissipation | PC | 150 | mW | Ta=25 | ||||||
| Output Power dissipation Derating factor (above Ta = 100C) | 5.8 | mW/C | Ta=25 | |||||||
| Collector current | IC | 50 | mA | Ta=25 | ||||||
| Collector-Emitter voltage | VCEO | 35 | V | Ta=25 | ||||||
| Emitter-Collector voltage | VECO | 6 | V | Ta=25 | ||||||
| Total Power Dissipation | PTOT | 200 | mW | Ta=25 | ||||||
| Isolation Voltage*1 | VISO | 5000 | V rms | AC for 1 minute, R.H.= 40 ~ 60% | ||||||
| Operating Temperature | TOPR | -55 to 110 | C | |||||||
| Storage Temperature | TSTG | -55 to 125 | C | |||||||
| Soldering Temperature*2 | TSOL | 260 | C | For 10 seconds | ||||||
| Electro-Optical Characteristics | ||||||||||
| Forward Voltage | VF | - | 1.2 | 1.4 | - | - | - | - | V | IF = 20mA |
| Reverse Current | IR | - | - | 10 | - | - | - | - | A | VR = 4V |
| Input capacitance | Cin | - | 30 | 250 | - | - | - | - | pF | V = 0, f = 1kHz |
| Collector-Emitter dark current | ICEO | - | - | 100 | - | - | - | - | nA | VCE = 20V, IF = 0mA |
| Collector-Emitter breakdown voltage | BVCEO | 35 | - | - | - | - | - | - | V | IC = 0.1mA |
| Emitter-Collector breakdown voltage | BVECO | 6 | - | - | - | - | - | - | V | IE = 0.1mA |
| Current Transfer ratio | CTR | 50 | 80 | 130 | 200 | 300 | 100 | 150 | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio | CTR | 600 | 160 | 260 | 400 | 600 | 200 | 300 | % | IF = 5mA ,VCE = 5V |
| Collector-Emitter saturation voltage | VCE(sat) | - | 0.1 | 0.2 | - | - | - | - | V | IF = 20mA ,IC = 1mA |
| Isolation resistance | RIO | 51010 | - | - | - | - | - | - | VIO = 500Vdc, 40~60% R.H. | |
| Floating capacitance | CIO | - | 0.6 | 1.0 | - | - | - | - | pF | VIO = 0, f = 1MHz |
| Cut-off frequency | fc | - | 80 | - | - | - | - | - | kHz | VCE = 5V, IC = 2mA RL = 100, -3dB |
| Rise time | tr | - | - | 18 | - | - | - | - | s | VCE = 2V, IC = 2mA, RL = 100 |
| Fall time | tf | - | - | 18 | - | - | - | - | s | VCE = 2V, IC = 2mA, RL = 100 |
2410121632_GUOXIN-JIAPIN-SEMICONDUCTOR-GX817C-S_C2684625.pdf
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