Signal Isolation Photocoupler GUOXIN JIAPIN SEMICONDUCTOR GX357NC 4 Pin SOP Package with Infrared LED
Key Attributes
Model Number:
GX357NC
Product Custom Attributes
Fall Time:
4us
Rise Time:
3us@2mA,100Ω
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@1mA,20mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;400%
Forward Current(If):
50mA
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
GX357NC
Package:
SOP-4-2.54mm
Product Description
Product Overview
The GX357N-G series is a 4-pin SOP phototransistor photocoupler featuring an infrared emitting diode optically coupled to a phototransistor detector. Designed for high isolation voltage (3750 V rms) and a compact 2.0 mm profile, these devices are Halogen-free, Pb-free, and RoHS compliant. They are suitable for applications requiring signal transmission between circuits of different potentials and impedances, such as DC-DC converters, programmable controllers, and telecommunication equipment.
Product Attributes
- Brand: Guo Xin Jia Pin SEMICONDUTOR (GXJP)
- Origin: Shenzhen
- Certifications: UL, cUL (No. E214129), VDE (No. 132249), SEMKO, NEMKO, DEMKO, FIMKO
- Compliance: EU REACH, Pb-free, RoHS compliant, Halogen free (Br <900 ppm, Cl <900 ppm, Br+Cl <1500 ppm)
Technical Specifications
| Part Number | Current Transfer Ratio (CTR) | Isolation Voltage (Viso) | Forward Voltage (VF) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Operating Temperature |
|---|---|---|---|---|---|---|
| GX357N-G Series (General) | 50~600% (at IF=5mA, VCE=5V) | 3750 V rms | Typ. 1.2V (at IF=20mA) | 80 V | 50 mA | -55 ~ +110 C |
| GX357NA | 80 ~ 160% (at IF=5mA, VCE=5V) | 3750 V rms | Typ. 1.2V (at IF=20mA) | 80 V | 50 mA | -55 ~ +110 C |
| GX357NB | 130 ~ 260% (at IF=5mA, VCE=5V) | 3750 V rms | Typ. 1.2V (at IF=20mA) | 80 V | 50 mA | -55 ~ +110 C |
| GX357NC | 200 ~ 400% (at IF=5mA, VCE=5V) | 3750 V rms | Typ. 1.2V (at IF=20mA) | 80 V | 50 mA | -55 ~ +110 C |
| GX357ND | 300 ~ 600% (at IF=5mA, VCE=5V) | 3750 V rms | Typ. 1.2V (at IF=20mA) | 80 V | 50 mA | -55 ~ +110 C |
| GX357NE | 100 ~ 200% (at IF=5mA, VCE=5V) | 3750 V rms | Typ. 1.2V (at IF=20mA) | 80 V | 50 mA | -55 ~ +110 C |
| GX357NF | 150 ~ 300% (at IF=5mA, VCE=5V) | 3750 V rms | Typ. 1.2V (at IF=20mA) | 80 V | 50 mA | -55 ~ +110 C |
2410121700_GUOXIN-JIAPIN-SEMICONDUCTOR-GX357NC_C2684626.pdf
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