phototransistor optocoupler with dc input CT MICRO CT357C T1 featuring 3750 vrms isolation voltage
Key Attributes
Model Number:
CT357C(T1)
Product Custom Attributes
Rise Time:
9us
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
60mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;400%
Forward Current(If):
50mA
Pd - Power Dissipation:
200mW
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
CT357C(T1)
Package:
SOP-4-2.54mm
Product Description
Product Overview
The CT357 Series is a general-purpose DC input phototransistor optocoupler housed in a 4-pin Mini-Flat package. It features high isolation up to 3750 VRMS and offers multiple Current Transfer Ratio (CTR) selections. Designed for efficient operation, it boasts a creepage distance of 5mm and operates within a wide temperature range of -55 C to +110 C. This series is suitable for applications including DC-DC converters, programmable controllers, telecommunication equipment, and hybrid substrates requiring high-density mounting.
Product Attributes
- Brand: CT Micro
- Package Type: 4-Pin Mini-Flat
- Output Type: Phototransistor
- Input Type: DC
- Color: Green Package
- Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
Technical Specifications
| Parameter | Rating | Units | Notes | ||
|---|---|---|---|---|---|
| Absolute Maximum Ratings (at 25C) | |||||
| Isolation Voltage (VISO) | 3750 | VRMS | |||
| Operating Temperature (TOPR) | -55 ~ +110 | C | |||
| Storage Temperature (TSTG) | -55 ~ +150 | C | |||
| Soldering Temperature (TSOL) | 260 | C | |||
| Total Power Dissipation (PTOT) | 200 | mW | |||
| Emitter Characteristics | |||||
| Forward Current (IF) | 50 | mA | |||
| Peak Transient Current (IF(TRANS)) | 1 | A | 1s P.W, 300pps | ||
| Reverse Voltage (VR) | 6 | V | |||
| Power Dissipation (PD) | 70 | mW | |||
| Detector Characteristics | |||||
| Power Dissipation (PC) | 150 | mW | |||
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | |||
| Emitter-Collector Breakdown Voltage (BVECO) | 6 | V | |||
| Collector Current (IC) | 50 | mA | |||
| Electrical Characteristics (TA = 25C unless otherwise specified) | |||||
| Emitter Characteristics | |||||
| Forward Voltage (VF) | - | 1.24 - 1.4 | V | IF=10mA | |
| Reverse Current (IR) | - | - 5 | A | VR = 6V | |
| Input Capacitance (CIN) | - | 10 - 250 | pF | f= 1MHz | |
| Detector Characteristics | |||||
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | - | - | V | IC= 100A |
| Emitter-Collector Breakdown Voltage (BVECO) | 7 | - | - | V | IE= 1mA |
| Collector-Emitter Dark Current (ICEO) | - | - 100 | n A | VCE= 20V, IF=0mA | |
| Transfer Characteristics | |||||
| Current Transfer Ratio (CTR) CT357 | 50 - 600 | % | IF= 5mA, VCE= 5V | ||
| Current Transfer Ratio (CTR) CT357A | 80 - 160 | % | IF= 5mA, VCE= 5V | ||
| Current Transfer Ratio (CTR) CT357B | 130 - 260 | % | IF= 5mA, VCE= 5V | ||
| Current Transfer Ratio (CTR) CT357C | 200 - 400 | % | IF= 5mA, VCE= 5V | ||
| Current Transfer Ratio (CTR) CT357D | 300 - 600 | % | IF= 5mA, VCE= 5V | ||
| Collector-Emitter Saturation Voltage (VCE(SAT)) | - | 0.06 - 0.2 | V | IF= 20mA, IC= 1mA | |
| Isolation Resistance (RIO) | 5x1010 | - | - | VIO= 500VDC | |
| Isolation Capacitance (CIO) | - | 0.5 - 1 | p F | f= 1MHz | |
| Switching Characteristics | |||||
| Rise Time (tr) | - | 6 - 18 | s | IC= 2mA, VCE= 2V, RL= 100 | |
| Fall Time (tf) | - | 8 - 18 | s | IC= 2mA, VCE= 2V, RL= 100 | |
2410121508_CT-MICRO-CT357C-T1_C114918.pdf
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