phototransistor optocoupler CT MICRO CT817C-H with 4 pin DIP package and 5000 VRMS isolation voltage
Key Attributes
Model Number:
CT817C-H
Product Custom Attributes
Rise Time:
9us
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;400%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
CT817C-H
Package:
DIP-4
Product Description
CT817 Series DC Input 4-Pin Phototransistor Optocoupler
Product Overview
The CT817 series is a high-isolation phototransistor optocoupler featuring a gallium arsenide infrared-emitting diode in a 4-lead DIP package. Designed for robust performance, it offers high isolation voltage (5000 VRMS) and a wide operating temperature range of -55 C to 110 C. This series is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces, providing reliable signal isolation.
Product Attributes
- Brand: CT Micro
- Type: Phototransistor Optocoupler
- Package: 4-Pin DIP
- Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Material Option: Green (G) or Non-green
Technical Specifications
| Parameter | Model | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Isolation Voltage | 5000 | VRMS | ||||
| Total Power Dissipation | 200 | mW | ||||
| Operating Temperature | -55 | 110 | C | |||
| Storage Temperature | -55 | 150 | C | |||
| Soldering Temperature | 260 | C | ||||
| Emitter Forward Current | 60 | mA | ||||
| Emitter Peak Transient Current | 1 | A | (1s P.W,300pps) | |||
| Emitter Reverse Voltage | 6 | V | ||||
| Emitter Power Dissipation | 100 | mW | ||||
| Detector Power Dissipation | 150 | mW | ||||
| Collector-Emitter Breakdown Voltage | 35 | V | ||||
| Emitter-Collector Breakdown Voltage | 6 | V | ||||
| Collector Current | 50 | mA | ||||
| Electrical Characteristics | ||||||
| Forward Voltage | 1.24 | 1.4 | V | IF=10mA | ||
| Reverse Current | 5 | A | VR = 6V | |||
| Input Capacitance | 10 | 30 | pF | f=1MHz | ||
| Collector-Emitter Breakdown Voltage | 35 | V | IC= 100A | |||
| Emitter-Collector Breakdown Voltage | 6 | V | IE= 100A | |||
| Collector-Emitter Dark Current | 100 | nA | VCE= 20V, IF=0mA | |||
| Current Transfer Ratio (CTR) | CT817 | 50 | 600 | % | IF= 5mA, VCE= 5V | |
| Current Transfer Ratio (CTR) | CT817A | 80 | 160 | % | IF= 5mA, VCE= 5V | |
| Current Transfer Ratio (CTR) | CT817B | 130 | 260 | % | IF= 5mA, VCE= 5V | |
| Current Transfer Ratio (CTR) | CT817C | 200 | 400 | % | IF= 5mA, VCE= 5V | |
| Current Transfer Ratio (CTR) | CT817D | 300 | 600 | % | IF= 5mA, VCE= 5V | |
| Collector-Emitter Saturation Voltage | 0.1 | 0.2 | V | IF= 20mA, IC= 1mA | ||
| Isolation Resistance | 5x1010 | VIO= 500VDC | ||||
| Isolation Capacitance | 0.25 | 1 | pF | f=1MHz | ||
| Switching Characteristics | ||||||
| Rise Time | 6 | 18 | s | IC= 2mA, VCE= 2V RL= 100 | ||
| Fall Time | 8 | 18 | s | |||
2410121452_CT-MICRO-CT817C-H_C127188.pdf
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