4 Pin Mini Flat Optocoupler CT MICRO CT181GB T1 with Multiple CTR Options and Wide Temperature Range

Key Attributes
Model Number: CT181GB(T1)
Product Custom Attributes
Fall Time:
-
Output Current:
50mA
Rise Time:
-
Vce Saturation(VCE(sat)):
400mV@1mA,0.2mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Load Type:
Phototransistor
Current Transfer Ratio:
600%;100%
Forward Current(If):
50mA
Input Type:
DC
Isolation Voltage(Vrms):
3.75kV
Number Of Channels:
1
Mfr. Part #:
CT181GB(T1)
Package:
SOP-4-2.54mm
Product Description

Product Overview

The CT181GB is a general-purpose optocoupler featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode. Housed in a 4-lead Mini-Flat package, it offers high isolation of 3750 VRMS, creepage distance 5mm, and a wide operating temperature range of -55 C to 110 C. Available with multiple CTR selections, this green package optocoupler is suitable for applications such as DC-DC converters, programmable controllers, telecommunication equipment, and hybrid substrates requiring high-density mounting.

Product Attributes

  • Brand: CT Micro
  • Package Type: 4-Pin Mini-Flat
  • Color: Green Package
  • Certifications: Proprietary & Confidential

Technical Specifications

Parameter Conditions Min Typ Max Units Notes
Absolute Maximum Ratings
Isolation Voltage (VISO) 3750 VRMS
Operating Temperature (TOPR) -55 110 C
Storage Temperature (TSTG) -55 150 C
Soldering Temperature (TSOL) 260 C
Total Power Dissipation (PTOT) 200 mW
Emitter Characteristics
Forward Current (IF) 50 mA
Peak Transient Current (IF(TRANS)) 1s P.W, 300pps 1 A
Reverse Voltage (VR) 6 V
Power Dissipation (PD) 70 mW
Detector Characteristics
Power Dissipation (PC) 150 mW
Collector-Emitter Breakdown Voltage (BVCEO) 80 V
Emitter-Collector Breakdown Voltage (BVECO) 7 V
Collector Current (IC) 50 mA
Electrical Characteristics (TA = 25C)
Forward Voltage (VF) IF=10mA 1.24 1.4 V
Reverse Current (IR) VR = 6V 5 A
Input Capacitance (CIN) f=1MHz 10 250 pF
Collector-Emitter Breakdown Voltage (BVCEO) IC= 100A 80 V
Emitter-Collector Breakdown Voltage (BVECO) IE= 100A 7 V
Collector-Emitter Dark Current (ICEO) VCE= 48V 0.01 0.08 A
Collector-Emitter Capacitance (CCE) f=1MHz 10 pF
Current Transfer Ratio (CTR) IF= 5mA, VCE= 5V 100 600 %
Saturated Current Transfer Ratio (CTR(sat)) IF=1mA, VCE= 0.4V 30 %
Collector-Emitter Saturation Voltage (VCE(SAT)) IF=1mA, IC= 0.2mA 0.4 V
Off-state Collector Current (IC(off)) VCE= 48V, VF=0.7V 1 10 A
Isolation Characteristics
Isolation Resistance (RIO) VIO= 500VDC 1x1012 1014
Isolation Capacitance (CIO) f=1MHz 0.5 pF
Isolation Voltage (VISO) AC, 60s 3750 Vrms
Isolation Voltage (VISO) AC, 1s in oil 10000
Isolation Voltage (VISO) DC, 60s in oil 10000

2410121521_CT-MICRO-CT181GB-T1_C191452.pdf

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