Compact 4 Pin Mini Flat Package AC Input Optocoupler CT MICRO CT354A V T1 with High Temperature Range

Key Attributes
Model Number: CT354A(V)(T1)
Product Custom Attributes
Rise Time:
6us@2mA,100Ω
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@1mA,20mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
-
Current Transfer Ratio:
150%;50%
Forward Current(If):
50mA
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
AC,DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
CT354A(V)(T1)
Package:
SOP-4-2.54mm
Product Description

CT354 AC Input 4-Pin Mini-Flat Phototransistor Optocoupler

Product Overview

The CT354 series is an AC input optocoupler featuring a phototransistor optically coupled to two gallium arsenide infrared-emitting diodes, housed in a 4-lead Mini-Flat package. It offers high isolation of 3750 VRMS and operates within a temperature range of -55 C to 110 C. This optocoupler is suitable for applications in switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. CTR flexibility is available as per order information.

Product Attributes

  • Brand: CT Micro
  • Package Type: 4-Pin Mini-Flat
  • Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
  • Input Type: AC Input
  • Output Type: Transistor Output

Technical Specifications

Symbol Parameters Test Conditions Min Typ Max Units Notes
Absolute Maximum Rating
VISO Isolation voltage 3750 VRMS
TOPR Operating temperature -55 +110 C
TSTG Storage temperature -55 +150 C
TSOL Soldering temperature 260 C
PTOT Total power dissipation 200 mW
IF Forward current (Emitter) 50 mA
IF(TRANS) Peak transient current (Emitter) (1s P.W,300pps) 1 A
PD Power dissipation (Emitter) 70 mW
PC Power dissipation (Detector) 150 mW
BVCEO Collector-Emitter Breakdown Voltage 80 V
BVECO Emitter-Collector Breakdown Voltage 7 V
IC Collector Current 50 mA
Electrical Characteristics (TA = 25C unless otherwise specified)
Emitter Characteristics
VF Forward voltage IF=10mA 1.24 1.4 V
CIN Input Capacitance f= 1kHz 45 pF
Detector Characteristics
BVCEO Collector-Emitter Breakdown Voltage IC= 100A 80 V
BVECO Emitter-Collector Breakdown Voltage IE= 100A 7 V
ICEO Collector-Emitter Dark Current VCE= 20V, IF=0mA 100 nA
Transfer Characteristics
CTR Current Transfer Ratio (CT354) IF= 1mA, VCE= 5V 20 300 %
CTR Current Transfer Ratio (CT354A) 50 150 %
VCE(SAT) Collector-Emitter Saturation Voltage IF= 20mA, IC= 1mA 0.1 0.2 V
RIO Isolation Resistance VIO= 500VDC 5x1010
CIO Isolation Capacitance f= 1MHz 0.6 1.0 pF
Switching Characteristics
tr Rise Time IC= 2mA, VCE= 2V, RL= 100 6 18 s
tf Fall Time 8 18 s

2410121512_CT-MICRO-CT354A-V-T1_C191856.pdf

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