High Isolation DC 4 Pin DIP Phototransistor Optocoupler CT MICRO CT785GB with RoHS REACH and Halogen Free Compliance
Key Attributes
Model Number:
CT785GB
Product Custom Attributes
Output Current:
80mA
Fall Time:
16us@2mA,100Ω
Rise Time:
16us@2mA,100Ω
Vce Saturation(VCE(sat)):
200mV@2.4mA,8mA
Operating Temperature:
-55℃~+125℃
Load Voltage:
80V
Reverse Voltage:
6V
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5.3kV
Number Of Channels:
1
Mfr. Part #:
CT785GB
Package:
DIP-4
Product Description
Product Overview
The CT785 Series is a DC 4-Pin DIP Phototransistor Optocoupler, featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode. It offers high isolation of 5300 VRMS and operates within a wide temperature range of -55 C to 125 C. Designed for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces, this series is compliant with RoHS, REACH, and Halogen-free standards. Regulatory approvals from UL, VDE, CQC, and IEC are pending.
Product Attributes
- Brand: CT Micro
- Product Series: CT785 Series
- Package Type: 4-Pin DIP
- Compliance: RoHS, REACH, Halogen Free
- Regulatory Approvals (Pending): UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC60065, IEC60950
Technical Specifications
| Symbol | Parameters | Ratings | Units | Notes |
|---|---|---|---|---|
| Absolute Maximum Rating at 25C | ||||
| VISO | Isolation voltage | 5300 | VRMS | |
| PTOT | Total power dissipation | 200 | mW | |
| TOPR | Operating temperature | -55 ~ +125 | C | |
| TSTG | Storage temperature | -55 ~ +150 | C | |
| TSOL | Soldering temperature | 260 | C | |
| Emitter | ||||
| IF | Forward current | 60 | mA | |
| IF(TRANS) | Peak transient current (1s P.W,300pps) | 1000 | mA | |
| VR | Reverse voltage | 6 | V | |
| PD | Emitter power dissipation | 100 | mW | |
| Detector | ||||
| PC | Detector power dissipation | 150 | mW | |
| BVCEO | Collector-Emitter Breakdown Voltage | 80 | V | |
| BVECO | Emitter-Collector Breakdown Voltage | 7 | V | |
| IC | Collector Current | 80 | mA | |
| Electrical Characteristics TA = 25C (unless otherwise specified) | ||||
| Emitter Characteristics | ||||
| VF | Forward voltage | - 1.2 1.3 | V | IF= 10mA |
| IR | Reverse Current | - - 5 | A | VR= 6V |
| CIN | Input Capacitance | - 10 30 | pF | f= 1MHz |
| Detector Characteristics | ||||
| BVCEO | Collector-Emitter Breakdown | 80 - - | V | IC= 100A |
| BVECO | Emitter-Collector Breakdown | 7 - - | V | IEC= 100A |
| ICEO | Collector-Emitter Dark Current | - - 100 | n | VCE= 24V, IF= 0mA |
| 50 | uA | VCE= 24V, IF=0Ma , Ta=85C | ||
| Transfer Characteristics | ||||
| CTR | Current Transfer Ratio | % | ||
| CT785GB | 100 600 | % | IF= 5mA, VCE= 5V | |
| CT785GR | 100 300 | % | ||
| CT785BLL | 200 400 | % | ||
| CTR(sat) | Saturated CTR | % | ||
| CT785GB | - 60 - | % | IF= 1mA, VCE= 0.4V | |
| CT785GR | 30 - - | % | ||
| CT785BLL | - 60 - | % | ||
| VCE(SAT) | Collector-Emitter Saturation Voltage | - 0.2 0.4 | V | IF= 8mA, IC= 2.4mA |
| RIO | Isolation Resistance | 5x1010 - - | VIO= 500VDC | |
| CIO | Isolation Capacitance | - 0.25 1 | pF | f= 1MHz |
| Switching Characteristics | ||||
| tr | Rise Time | - 16 | s | IC= 2mA, VCE= 2V RL= 100 |
| tf | Fall Time | - 16 | s | |
| ton | Turn-on time | 20 | s | |
| toff | Turn-off time | 20 | s | |
2410121521_CT-MICRO-CT785GB_C191924.pdf
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