High Isolation DC Input Phototransistor Optocoupler CT MICRO CT817A S T3 for Electronic Circuits
Key Attributes
Model Number:
CT817A(S)(T3)
Product Custom Attributes
Rise Time:
9us
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current Transfer Ratio:
80%;160%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
CT817A(S)(T3)
Package:
SOP-4-2.54mm
Product Description
Product Overview
The CT817 Series is a DC input, 4-pin phototransistor optocoupler designed for high isolation applications. Featuring a gallium arsenide infrared-emitting diode optically coupled to a photo transistor within a DIP package, this series offers high isolation voltage of 5000 VRMS and a wide operating temperature range of -55 C to 110 C. It is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. Various lead forming options are available to accommodate different mounting requirements.
Product Attributes
- Brand: CT Micro
- Product Series: CT817 Series
- Type: DC Input 4-Pin Phototransistor Optocoupler
- Package Type: DIP
- Regulatory Approvals: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Lead Forming Options: Standard DIP, Gullwing (400mil), Through Hole (M Type), Surface Mount (S Type), Surface Mount (Low Profile) (SL Type), Surface Mount (Gullwing) (SLM Type)
- Material Option: Green (G) or Non-green
- Lead Frame Option: Iron (H) or Copper
Technical Specifications
| Parameter | Model/Type | Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|---|
| Isolation Voltage (AC, 1 minute) | CT817 Series | 5000 | VRMS | ||||
| Total Power Dissipation | CT817 Series | 200 | mW | ||||
| Operating Temperature | CT817 Series | -55 | 110 | C | |||
| Storage Temperature | CT817 Series | -55 | 150 | C | |||
| Soldering Temperature | CT817 Series | 260 | C | ||||
| Forward Current (Emitter) | CT817 Series | 60 | mA | ||||
| Peak Transient Current (Emitter) | CT817 Series | 1s P.W, 300pps | 1 | A | |||
| Reverse Voltage (Emitter) | CT817 Series | 6 | V | ||||
| Emitter Power Dissipation | CT817 Series | 100 | mW | ||||
| Detector Power Dissipation | CT817 Series | 150 | mW | ||||
| Collector-Emitter Breakdown Voltage | CT817 Series | 35 | V | ||||
| Emitter-Collector Breakdown Voltage | CT817 Series | 6 | V | ||||
| Collector Current (Detector) | CT817 Series | 50 | mA | ||||
| Forward Voltage | CT817 Series | IF=10mA | 1.24 | 1.4 | V | ||
| Reverse Current | CT817 Series | VR = 6V | - | 5 | A | ||
| Input Capacitance | CT817 Series | f=1MHz | 10 | 30 | pF | ||
| Collector-Emitter Breakdown Voltage | CT817 Series | IC= 100A | 35 | - | - | V | |
| Emitter-Collector Breakdown Voltage | CT817 Series | IE= 100A | 6 | - | - | V | |
| Collector-Emitter Dark Current | CT817 Series | VCE= 20V, IF=0mA | - | 100 | nA | ||
| Current Transfer Ratio (CTR) | CT817 | IF= 5mA, VCE= 5V | 50 | - | 600 | % | |
| Current Transfer Ratio (CTR) | CT817A | IF= 5mA, VCE= 5V | 80 | - | 160 | % | |
| Current Transfer Ratio (CTR) | CT817B | IF= 5mA, VCE= 5V | 130 | - | 260 | % | |
| Current Transfer Ratio (CTR) | CT817C | IF= 5mA, VCE= 5V | 200 | - | 400 | % | |
| Current Transfer Ratio (CTR) | CT817D | IF= 5mA, VCE= 5V | 300 | - | 600 | % | |
| Collector-Emitter Saturation Voltage | CT817 Series | IF= 20mA, IC= 1mA | 0.1 | 0.2 | V | ||
| Isolation Resistance | CT817 Series | VIO= 500VDC | 5x1010 | - | - | ||
| Isolation Capacitance | CT817 Series | f=1MHz | 0.25 | 1 | pF | ||
| Rise Time | CT817 Series | IC= 2mA, VCE= 2V, RL= 100 | 6 | 18 | s | ||
| Fall Time | CT817 Series | IC= 2mA, VCE= 2V, RL= 100 | 8 | 18 | s |
2410121452_CT-MICRO-CT817A-S-T3_C191928.pdf
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