Phototransistor optocoupler CT MICRO CT817B SL T1 H DC input 4 pin for switch mode power supplies
Key Attributes
Model Number:
CT817B(SL)(T1)-H
Product Custom Attributes
Rise Time:
9us
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current Transfer Ratio:
130%;260%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
CT817B(SL)(T1)-H
Package:
SOP-4-2.54mm
Product Description
Product Overview
The CT817 Series is a DC input, 4-pin phototransistor optocoupler designed for high isolation applications. It features a gallium arsenide infrared-emitting diode optically coupled to a phototransistor within a 4-lead DIP package, with various lead forming options available. This series offers high isolation voltage (5000 VRMS) and a wide operating temperature range from -55 C to 110 C. Applications include switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.
Product Attributes
- Brand: CT Micro
- Product Series: CT817 Series
- Type: DC Input 4-Pin Phototransistor Optocoupler
- Package Type: 4-lead DIP
- Regulatory Approvals: UL (UL1577), VDE (EN60747-5-5), CQC (GB4943.1, GB8898), IEC60065, IEC60950
- Material Options: Green (G) or Non-green
- Lead Frame Options: Iron (H) or Copper
Technical Specifications
| Parameter | Model/Type | Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| Isolation Voltage (AC, 1 minute) | CT817 Series | 5000 | VRMS | ||||
| Total Power Dissipation | CT817 Series | 200 | mW | ||||
| Operating Temperature | CT817 Series | -55 | 110 | C | |||
| Storage Temperature | CT817 Series | -55 | 150 | C | |||
| Soldering Temperature | CT817 Series | 260 | C | ||||
| Forward Current (Emitter) | CT817 Series | 60 | mA | ||||
| Peak Transient Current (Emitter) | CT817 Series | 1s P.W, 300pps | 1 | A | |||
| Reverse Voltage (Emitter) | CT817 Series | 6 | V | ||||
| Emitter Power Dissipation | CT817 Series | 100 | mW | ||||
| Detector Power Dissipation | CT817 Series | 150 | mW | ||||
| Collector-Emitter Breakdown Voltage | CT817 Series | 35 | V | ||||
| Emitter-Collector Breakdown Voltage | CT817 Series | 6 | V | ||||
| Collector Current (Detector) | CT817 Series | 50 | mA | ||||
| Electrical Characteristics (TA = 25C unless otherwise specified) | |||||||
| Forward Voltage | CT817 Series | IF=10mA | 1.24 | 1.4 | V | ||
| Reverse Current | CT817 Series | VR = 6V | 5 | A | |||
| Input Capacitance | CT817 Series | f=1MHz | 10 | 30 | pF | ||
| Collector-Emitter Breakdown Voltage | CT817 Series | IC= 100A | 35 | V | |||
| Emitter-Collector Breakdown Voltage | CT817 Series | IE= 100A | 6 | V | |||
| Collector-Emitter Dark Current | CT817 Series | VCE= 20V, IF=0mA | 100 | nA | |||
| Current Transfer Ratio (CTR) | CT817 | IF= 5mA, VCE= 5V | 50 | 600 | % | ||
| Current Transfer Ratio (CTR) | CT817A | IF= 5mA, VCE= 5V | 80 | 160 | % | ||
| Current Transfer Ratio (CTR) | CT817B | IF= 5mA, VCE= 5V | 130 | 260 | % | ||
| Current Transfer Ratio (CTR) | CT817C | IF= 5mA, VCE= 5V | 200 | 400 | % | ||
| Current Transfer Ratio (CTR) | CT817D | IF= 5mA, VCE= 5V | 300 | 600 | % | ||
| Collector-Emitter Saturation Voltage | CT817 Series | IF= 20mA, IC= 1mA | 0.1 | 0.2 | V | ||
| Isolation Resistance | CT817 Series | VIO= 500VDC | 5x1010 | ||||
| Isolation Capacitance | CT817 Series | f=1MHz | 0.25 | 1 | pF | ||
| Switching Characteristics | |||||||
| Rise Time | CT817 Series | IC= 2mA, VCE= 2V, RL= 100 | 6 | 18 | s | ||
| Fall Time | CT817 Series | IC= 2mA, VCE= 2V, RL= 100 | 8 | 18 | s | ||
2410121452_CT-MICRO-CT817B-SL-T1-H_C191930.pdf
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