4 Pin DIP Package Phototransistor Optocoupler CT MICRO CT817C SL T1 H Designed for Signal Isolation
Product Overview
The CT817 Series is a DC input, 4-pin phototransistor optocoupler designed for high isolation applications. It features a gallium arsenide infrared-emitting diode optically coupled to a phototransistor within a 4-lead DIP package, with various lead forming options available. This series offers high isolation voltage (5000 VRMS) and a wide operating temperature range from -55 C to 110 C. Key applications include switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. The product is compliant with several regulatory approvals, including UL, VDE, CQC, and IEC standards.
Product Attributes
- Brand: CT Micro
- Series: CT817 Series
- Component Type: Phototransistor Optocoupler
- Input Type: DC Input
- Package Type: 4-Pin DIP
- Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Lead Forming Options: Standard DIP, Gullwing (400mil), Through Hole (M Type), Surface Mount (S Type), Surface Mount (Low Profile) (SL Type), Surface Mount (Gullwing) (SLM Type)
- Material Option: Green (G) or Non-green
- Lead Frame Option: Iron (H) or Copper (None)
Technical Specifications
| Parameter | Model/Type | Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| Isolation Voltage (AC, 1 minute) | CT817 Series | 5000 | VRMS | ||||
| Total Power Dissipation | CT817 Series | 200 | mW | ||||
| Operating Temperature | CT817 Series | -55 | 110 | C | |||
| Storage Temperature | CT817 Series | -55 | 150 | C | |||
| Soldering Temperature | CT817 Series | 260 | C | ||||
| Forward Current (Emitter) | CT817 Series | 60 | mA | ||||
| Peak Transient Current (Emitter) | CT817 Series | 1s P.W, 300pps | 1 | A | |||
| Reverse Voltage (Emitter) | CT817 Series | 6 | V | ||||
| Emitter Power Dissipation | CT817 Series | 100 | mW | ||||
| Detector Power Dissipation | CT817 Series | 150 | mW | ||||
| Collector-Emitter Breakdown Voltage | CT817 Series | 35 | V | ||||
| Emitter-Collector Breakdown Voltage | CT817 Series | 6 | V | ||||
| Collector Current (Detector) | CT817 Series | 50 | mA | ||||
| Electrical Characteristics (TA = 25C unless otherwise specified) | |||||||
| Forward Voltage | CT817 Series | IF=10mA | 1.24 | 1.4 | V | ||
| Reverse Current | CT817 Series | VR = 6V | 5 | A | |||
| Input Capacitance | CT817 Series | f=1MHz | 10 | 30 | pF | ||
| Collector-Emitter Breakdown Voltage | CT817 Series | IC= 100A | 35 | V | |||
| Emitter-Collector Breakdown Voltage | CT817 Series | IE= 100A | 6 | V | |||
| Collector-Emitter Dark Current | CT817 Series | VCE= 20V, IF=0mA | 100 | nA | |||
| Current Transfer Ratio (CTR) | CT817 | IF= 5mA, VCE= 5V | 50 | 600 | % | ||
| Current Transfer Ratio (CTR) | CT817A | IF= 5mA, VCE= 5V | 80 | 160 | % | ||
| Current Transfer Ratio (CTR) | CT817B | IF= 5mA, VCE= 5V | 130 | 260 | % | ||
| Current Transfer Ratio (CTR) | CT817C | IF= 5mA, VCE= 5V | 200 | 400 | % | ||
| Current Transfer Ratio (CTR) | CT817D | IF= 5mA, VCE= 5V | 300 | 600 | % | ||
| Collector-Emitter Saturation Voltage | CT817 Series | IF= 20mA, IC= 1mA | 0.1 | 0.2 | V | ||
| Isolation Resistance | CT817 Series | VIO= 500VDC | 5x1010 | ||||
| Isolation Capacitance | CT817 Series | f=1MHz | 0.25 | 1 | pF | ||
| Switching Characteristics | |||||||
| Rise Time | CT817 Series | IC= 2mA, VCE= 2V, RL= 100 | 6 | 18 | s | ||
| Fall Time | CT817 Series | IC= 2mA, VCE= 2V, RL= 100 | 8 | 18 | s | ||
2410121452_CT-MICRO-CT817C-SL-T1-H_C191932.pdf
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