4 Pin DIP Package Phototransistor Optocoupler CT MICRO CT817C SL T1 H Designed for Signal Isolation

Key Attributes
Model Number: CT817C(SL)(T1)-H
Product Custom Attributes
Rise Time:
9us
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;400%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
CT817C(SL)(T1)-H
Package:
SOP-4-2.54mm
Product Description

Product Overview

The CT817 Series is a DC input, 4-pin phototransistor optocoupler designed for high isolation applications. It features a gallium arsenide infrared-emitting diode optically coupled to a phototransistor within a 4-lead DIP package, with various lead forming options available. This series offers high isolation voltage (5000 VRMS) and a wide operating temperature range from -55 C to 110 C. Key applications include switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. The product is compliant with several regulatory approvals, including UL, VDE, CQC, and IEC standards.

Product Attributes

  • Brand: CT Micro
  • Series: CT817 Series
  • Component Type: Phototransistor Optocoupler
  • Input Type: DC Input
  • Package Type: 4-Pin DIP
  • Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
  • Lead Forming Options: Standard DIP, Gullwing (400mil), Through Hole (M Type), Surface Mount (S Type), Surface Mount (Low Profile) (SL Type), Surface Mount (Gullwing) (SLM Type)
  • Material Option: Green (G) or Non-green
  • Lead Frame Option: Iron (H) or Copper (None)

Technical Specifications

Parameter Model/Type Conditions Min Typ Max Units Notes
Absolute Maximum Ratings
Isolation Voltage (AC, 1 minute) CT817 Series 5000 VRMS
Total Power Dissipation CT817 Series 200 mW
Operating Temperature CT817 Series -55 110 C
Storage Temperature CT817 Series -55 150 C
Soldering Temperature CT817 Series 260 C
Forward Current (Emitter) CT817 Series 60 mA
Peak Transient Current (Emitter) CT817 Series 1s P.W, 300pps 1 A
Reverse Voltage (Emitter) CT817 Series 6 V
Emitter Power Dissipation CT817 Series 100 mW
Detector Power Dissipation CT817 Series 150 mW
Collector-Emitter Breakdown Voltage CT817 Series 35 V
Emitter-Collector Breakdown Voltage CT817 Series 6 V
Collector Current (Detector) CT817 Series 50 mA
Electrical Characteristics (TA = 25C unless otherwise specified)
Forward Voltage CT817 Series IF=10mA 1.24 1.4 V
Reverse Current CT817 Series VR = 6V 5 A
Input Capacitance CT817 Series f=1MHz 10 30 pF
Collector-Emitter Breakdown Voltage CT817 Series IC= 100A 35 V
Emitter-Collector Breakdown Voltage CT817 Series IE= 100A 6 V
Collector-Emitter Dark Current CT817 Series VCE= 20V, IF=0mA 100 nA
Current Transfer Ratio (CTR) CT817 IF= 5mA, VCE= 5V 50 600 %
Current Transfer Ratio (CTR) CT817A IF= 5mA, VCE= 5V 80 160 %
Current Transfer Ratio (CTR) CT817B IF= 5mA, VCE= 5V 130 260 %
Current Transfer Ratio (CTR) CT817C IF= 5mA, VCE= 5V 200 400 %
Current Transfer Ratio (CTR) CT817D IF= 5mA, VCE= 5V 300 600 %
Collector-Emitter Saturation Voltage CT817 Series IF= 20mA, IC= 1mA 0.1 0.2 V
Isolation Resistance CT817 Series VIO= 500VDC 5x1010
Isolation Capacitance CT817 Series f=1MHz 0.25 1 pF
Switching Characteristics
Rise Time CT817 Series IC= 2mA, VCE= 2V, RL= 100 6 18 s
Fall Time CT817 Series IC= 2mA, VCE= 2V, RL= 100 8 18 s

2410121452_CT-MICRO-CT817C-SL-T1-H_C191932.pdf

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