Industrial Grade 4 Pin Phototransistor Optocoupler CT MICRO CT817D H HZD for High Isolation Applications
Key Attributes
Model Number:
CT817D-H(HZD)
Product Custom Attributes
Rise Time:
9us
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current Transfer Ratio:
600%;300%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
CT817D-H(HZD)
Package:
DIP-4
Product Description
Product Overview
The CT817 Series is a DC input, 4-pin phototransistor optocoupler designed for high isolation applications. It features a gallium arsenide infrared-emitting diode optically coupled to a phototransistor, available in a 4-lead DIP package with various lead forming options. With a high isolation voltage of 5000 VRMS and an operating temperature range of -55 C to 110 C, this series is suitable for demanding environments. Key applications include switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.
Product Attributes
- Brand: CT Micro
- Product Series: CT817 Series
- Type: DC Input 4-Pin Phototransistor Optocoupler
- Package Type: 4-lead DIP
- Regulatory Approvals: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Material Option: Green (G) or Non-green
- Lead Frame Option: Iron (H) or Copper (None)
Technical Specifications
| Parameter | Model/Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (at 25C) | ||||||
| Isolation Voltage (AC, 1 minute) | 5000 | VRMS | ||||
| Total Power Dissipation | 200 | mW | ||||
| Operating Temperature | -55 | 110 | C | |||
| Storage Temperature | -55 | 150 | C | |||
| Soldering Temperature | 260 | C | ||||
| Emitter Characteristics | ||||||
| Forward Current | IF=10mA | 1.24 | 1.4 | V | ||
| Reverse Voltage | 6 | V | ||||
| Emitter Power Dissipation | 100 | mW | ||||
| Detector Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | IC= 100A | 35 | V | |||
| Emitter-Collector Breakdown Voltage | IE= 100A | 6 | V | |||
| Collector Current | 50 | mA | ||||
| Detector Power Dissipation | 150 | mW | ||||
| Electrical Characteristics (TA = 25C unless otherwise specified) | ||||||
| Forward Voltage | IF=10mA | - | 1.24 | 1.4 | V | |
| Reverse Current | VR = 6V | - | - | 5 | A | |
| Input Capacitance | f=1MHz | - | 10 | 30 | pF | |
| Collector-Emitter Breakdown Voltage | IC= 100A | 35 | - | - | V | |
| Emitter-Collector Breakdown Voltage | IE= 100A | 6 | - | - | V | |
| Collector-Emitter Dark Current | VCE= 20V, IF=0mA | - | - | 100 | nA | |
| Transfer Characteristics | ||||||
| Current Transfer Ratio (CTR) | CT817, IF= 5mA, VCE= 5V | 50 | - | 600 | % | |
| Current Transfer Ratio (CTR) | CT817A, IF= 5mA, VCE= 5V | 80 | - | 160 | % | |
| Current Transfer Ratio (CTR) | CT817B, IF= 5mA, VCE= 5V | 130 | - | 260 | % | |
| Current Transfer Ratio (CTR) | CT817C, IF= 5mA, VCE= 5V | 200 | - | 400 | % | |
| Current Transfer Ratio (CTR) | CT817D, IF= 5mA, VCE= 5V | 300 | - | 600 | % | |
| Collector-Emitter Saturation Voltage | IF= 20mA, IC= 1mA | - | 0.1 | 0.2 | V | |
| Isolation Resistance | VIO= 500VDC | 5x1010 | - | - | ||
| Isolation Capacitance | f=1MHz | - | 0.25 | 1 | pF | |
| Switching Characteristics | ||||||
| Rise Time | IC= 2mA, VCE= 2V, RL= 100 | - | 6 | 18 | s | |
| Fall Time | - | 8 | 18 | s | ||
2410121452_CT-MICRO-CT817D-H-HZD_C191935.pdf
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