CT MICRO CTH281GB T1 Optocoupler with Gallium Arsenide Infrared Diode and 3750 VRMS Isolation Voltage
Key Attributes
Model Number:
CTH281GB(T1)
Product Custom Attributes
Fall Time:
9us
Output Current:
50mA
Rise Time:
5us
Vce Saturation(VCE(sat)):
400mV@1mA,0.2mA
Operating Temperature:
-55℃~+125℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
600%;30%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
CTH281GB(T1)
Package:
SOP-4-1.27mm
Product Description
Product Overview
The CTH281GB series is a general-purpose optocoupler featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode. Housed in a 4-lead half pitch Mini-Flat package, this series offers high isolation of 3750 VRMS and a wide operating temperature range of -55 C to 125 C. It is designed for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. The optocoupler is compliant with RoHS, REACH, and Halogen regulations and is pending approval for UL, VDE, CQC, and IEC regulatory standards.
Product Attributes
- Brand: CT Micro
- Product Type: Phototransistor Optocoupler
- Package Type: Half Pitch Mini-Flat
- Certifications (Pending Approval): UL, VDE, CQC, IEC
- Compliance: RoHS, REACH, Halogen
- Isolation Voltage: 3750 VRMS
- Operating Temperature Range: -55 C to 125 C
Technical Specifications
| Model | Parameter | Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|---|
| CTH281GB | Isolation Voltage (VISO) | 3750 | VRMS | ||||
| Total Power Dissipation (PTOT) | 200 | mW | |||||
| Operating Temperature (TOPR) | -55 | 125 | C | ||||
| Storage Temperature (TSTG) | -55 | 150 | C | ||||
| Soldering Temperature (TSOL) | 260 | C | |||||
| Forward Current (IF) | 60 | mA | |||||
| Peak Transient Current (IF(TRANS)) | 1s P.W, 300pps | 1000 | mA | ||||
| Reverse Voltage (VR) | 6 | V | |||||
| Emitter Power Dissipation (PD) | 70 | mW | |||||
| Detector Power Dissipation (PC) | 150 | mW | |||||
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | |||||
| Emitter-Collector Breakdown Voltage (BVECO) | 6 | V | |||||
| Collector Current (IC) | 50 | mA | |||||
| Emitter Characteristics | Forward Voltage (VF) | IF=10mA | 1.25 | 1.4 | V | ||
| Reverse Current (IR) | VR = 6V | 5 | A | ||||
| Input Capacitance (CIN) | f= 1MHz | 10 | 30 | pF | |||
| Detector Characteristics | Collector-Emitter Breakdown Voltage (BVCEO) | IC= 100A | 80 | V | |||
| Emitter-Collector Breakdown Voltage (BVECO) | IE= 100A | 7 | V | ||||
| Collector-Emitter Dark Current (ICEO) | VCE= 48V, IF=0mA | 100 | nA | ||||
| Collector-Emitter Dark Current (ICEO) | VCE = 48V, Ta = 85C | 50 | A | ||||
| Transfer Characteristics | Current Transfer Ratio (CTR) | IF=5mA, VCE=5V | 100 | 600 | % | ||
| Current Transfer Ratio (CTR) | IF=1mA, VCE= 0.4V | 30 | % | ||||
| Collector-Emitter Saturation Voltage (VCE(SAT)) | IF=1mA, IC= 0.2mA | 0.4 | V | ||||
| Isolation Resistance (RIO) | VIO= 500VDC | 5x1010 | |||||
| Isolation Capacitance (CIO) | f= 1MHz | 0.25 | 1 | pF | |||
| Switching Characteristics | Rise Time (tr) | IC= 2mA, VCE= 2V, RL= 100 | 5 | 16 | s | ||
| Fall Time (tf) | 6 | 16 | s | ||||
| Turn-on time (ton) | 8 | 20 | s | ||||
| Turn-off time (toff) | 7 | 20 | s |
2410121615_CT-MICRO-CTH281GB-T1_C191936.pdf
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