CT MICRO CTH291GB T1 Optocoupler with Gallium Arsenide Infrared Diode and Wide Operating Temperature
Key Attributes
Model Number:
CTH291GB(T1)
Product Custom Attributes
Fall Time:
6us
Output Current:
50mA
Rise Time:
5us
Vce Saturation(VCE(sat)):
400mV@1mA,0.2mA
Operating Temperature:
-55℃~+125℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
100%;400%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
CTH291GB(T1)
Package:
SOP-4-1.27mm
Product Description
Product Overview
The CTH291GB series is a general-purpose optocoupler featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode. Housed in a 4-lead half pitch Mini-Flat package, this optocoupler offers high isolation of 3750 VRMS and a wide operating temperature range of -55 C to 125 C. It is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. The series is RoHS, REACH, and Halogen compliant, with pending regulatory approvals from UL, VDE, CQC, and IEC.
Product Attributes
- Brand: CT Micro
- Product Type: Phototransistor Optocoupler
- Package Type: Half Pitch Mini-Flat
- Compliance: RoHS, REACH, Halogen
- Regulatory Approvals (Pending): UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC60065, IEC60950
Technical Specifications
| Parameter | Rating | Units | Notes |
|---|---|---|---|
| Isolation Voltage (VISO) | 3750 | VRMS | |
| Total Power Dissipation (PTOT) | 200 | mW | |
| Operating Temperature (TOPR) | -55 ~ +125 | C | |
| Storage Temperature (TSTG) | -55 ~ +150 | C | |
| Soldering Temperature (TSOL) | 260 | C | |
| Emitter Forward Current (IF) | 60 | mA | |
| Emitter Peak Transient Current (IF(TRANS)) | 1000 | mA | 1s P.W, 300pps |
| Emitter Reverse Voltage (VR) | 6 | V | |
| Emitter Power Dissipation (PD) | 70 | mW | |
| Detector Power Dissipation (PC) | 150 | mW | |
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | |
| Emitter-Collector Breakdown Voltage (BVECO) | 6 | V | |
| Collector Current (IC) | 50 | mA | |
| Forward Voltage (VF) | 1.25 (Typ) | V | IF=10mA |
| Reverse Current (IR) | 5 (Max) | A | VR=6V |
| Input Capacitance (CIN) | 10 (Typ) | pF | f=1MHz |
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | IC=100A |
| Emitter-Collector Breakdown Voltage (BVECO) | 7 | V | IE=100A |
| Collector-Emitter Dark Current (ICEO) | 100 (Max) | nA | VCE=48V, IF=0mA |
| Collector-Emitter Dark Current (ICEO) | 50 (Max) | A | VCE=48V, Ta=85C |
| Current Transfer Ratio (CTR) | 100 - 400 | % | IF=5mA, VCE=5V |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | 0.4 (Max) | V | IF=1mA, IC=0.2mA |
| Isolation Resistance (RIO) | 5x1010 | VIO=500VDC | |
| Isolation Capacitance (CIO) | 0.25 (Typ) | pF | f=1MHz |
| Rise Time (tr) | 5 (Typ) | s | IC=2mA, VCE=2V, RL=100 |
| Fall Time (tf) | 6 (Typ) | s | IC=2mA, VCE=2V, RL=100 |
| Turn-on Time (ton) | 8 (Typ) | s | IC=2mA, VCE=2V, RL=100 |
| Turn-off Time (toff) | 7 (Typ) | s | IC=2mA, VCE=2V, RL=100 |
2410121615_CT-MICRO-CTH291GB-T1_C191937.pdf
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