CT MICRO CT816C SL T3 H Phototransistor Optocoupler Offering Wide Temperature Range and Performance
Key Attributes
Model Number:
CT816C(SL)(T3)-H
Product Custom Attributes
Rise Time:
9us
Output Current:
50mA
Fall Time:
8us
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;400%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
CT816C(SL)(T3)-H
Package:
SOP-4-2.54mm
Product Description
Product Overview
The CT816 Series is a 4-pin phototransistor optocoupler featuring high isolation up to 5000 VRMS. It offers DC input with a transistor output and is available in various CTR flexibilities. Designed for reliable performance, it operates within a wide temperature range of -55 C to 110 C. The series is suitable for applications in switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.
Product Attributes
- Brand: CT Micro
- Series: CT816
- Regulatory Approvals: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Material Option: Green (G) or Non-green
- Lead Frame Option: Iron (H) or Copper
Technical Specifications
| Parameter | Model/Condition | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Isolation Voltage (AC, 1 minute) | 5000 | VRMS | ||||
| Total Power Dissipation | 200 | mW | ||||
| Operating Temperature | -55 | 110 | C | |||
| Storage Temperature | -55 | 150 | C | |||
| Soldering Temperature | 260 | C | ||||
| Forward Current (Emitter) | 60 | mA | ||||
| Peak Transient Current (Emitter) | (1s P.W, 300pps) | 1 | A | |||
| Reverse Voltage (Emitter) | 6 | V | ||||
| Emitter Power Dissipation | 100 | mW | ||||
| Detector Power Dissipation | 150 | mW | ||||
| Collector-Emitter Breakdown Voltage | 80 | V | ||||
| Emitter-Collector Breakdown Voltage | 6 | V | ||||
| Collector Current (Detector) | 50 | mA | ||||
| Electrical Characteristics (TA = 25C unless otherwise specified) | ||||||
| Forward Voltage | IF=10mA | 1.24 | 1.4 | V | ||
| Reverse Current | VR = 6V | 5 | A | |||
| Input Capacitance | f=1MHz | 30 | pF | |||
| Collector-Emitter Breakdown Voltage | IC= 100A | 80 | V | |||
| Emitter-Collector Breakdown Voltage | IE= 100A | 6 | V | |||
| Collector-Emitter Dark Current | VCE= 20V, IF=0mA | 100 | nA | |||
| Transfer Characteristics | ||||||
| Current Transfer Ratio (CTR) | CT816 (IF= 5mA, VCE= 5V) | 50 | 600 | % | ||
| CT816A (IF= 5mA, VCE= 5V) | 80 | 160 | % | |||
| CT816B (IF= 5mA, VCE= 5V) | 130 | 260 | % | |||
| CT816C (IF= 5mA, VCE= 5V) | 200 | 400 | % | |||
| CT816D (IF= 5mA, VCE= 5V) | 300 | 600 | % | |||
| CT816F (IF= 5mA, VCE= 5V) | 100 | 200 | % | |||
| CT816I (IF= 10mA, VCE= 5V) | 63 | 125 | % | |||
| CT816J (IF= 10mA, VCE= 5V) | 100 | 200 | % | |||
| CT816K (IF= 10mA, VCE= 5V) | 160 | 320 | % | |||
| CT816I (IF= 1mA, VCE= 5V) | 22 | % | ||||
| CT816J (IF= 1mA, VCE= 5V) | 34 | % | ||||
| CT816K (IF= 1mA, VCE= 5V) | 56 | % | ||||
| Collector-Emitter Saturation Voltage | IF= 20mA, IC= 1mA | 0.1 | 0.2 | V | ||
| Isolation Resistance | VIO= 500VDC | 5x1010 | ||||
| Isolation Capacitance | f=1MHz | 0.25 | 1 | pF | ||
| Switching Characteristics | ||||||
| Rise Time | IC= 2mA, VCE= 2V, RL= 100 | 6 | s | |||
| Fall Time | 8 | s | ||||
| Package Dimensions | ||||||
| Spatial Distance (S/SL Type) | 7.5 | mm | ||||
| Spatial Distance (M/SLM Type) | 8.0 | mm | ||||
| External Creepage | 7.4 | mm | ||||
| Distance Through Isolation | 0.4 | mm | ||||
2410121502_CT-MICRO-CT816C-SL-T3-H_C453465.pdf
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