CT MICRO CT817B SL T3 H 4 pin phototransistor optocoupler DC input with various lead forming options
Key Attributes
Model Number:
CT817B(SL)(T3)-H
Product Custom Attributes
Rise Time:
9us
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current Transfer Ratio:
130%;260%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
CT817B(SL)(T3)-H
Package:
SOP-4-2.54mm
Product Description
Product Overview
The CT817 Series is a 4-pin phototransistor optocoupler featuring DC input and a transistor output. It offers high isolation of 5000 VRMS and a wide operating temperature range from -55 C to 110 C. Designed for applications requiring reliable signal isolation, this series is suitable for switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. Various lead forming options and CTR flexibility are available to meet specific design needs.
Product Attributes
- Brand: CT Micro
- Product Type: DC Input 4-Pin Phototransistor Optocoupler
- Package Type: DIP (Dual In-line Package)
- Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Lead Forming Options: Standard DIP, Gullwing (400mil), Through Hole (M Type), Surface Mount (S Type), Surface Mount (Low Profile) (SL Type), Surface Mount (Gullwing) (SLM Type)
- Material Option: Green (G) or Non-green
- Lead Frame Option: Iron (H) or Copper (None)
Technical Specifications
| Parameter | Model/Type | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Isolation Voltage (AC, 1 minute) | CT817 Series | - | - | 5000 | VRMS | VISO |
| Total Power Dissipation | CT817 Series | - | - | 200 | mW | PTOT |
| Operating Temperature | CT817 Series | -55 | - | 110 | C | TOPR |
| Storage Temperature | CT817 Series | -55 | - | 150 | C | TSTG |
| Soldering Temperature | CT817 Series | - | - | 260 | C | TSOL |
| Forward Current | Emitter | - | - | 60 | mA | IF |
| Peak Transient Current (1s P.W,300pps) | Emitter | - | - | 1 | A | IF(TRANS) |
| Reverse Voltage | Emitter | - | - | 6 | V | VR |
| Emitter Power Dissipation | Emitter | - | - | 100 | mW | PD |
| Detector Power Dissipation | Detector | - | - | 150 | mW | PD |
| Collector-Emitter Breakdown Voltage | Detector | 35 | - | - | V | BVCEO |
| Emitter-Collector Breakdown Voltage | Detector | 6 | - | - | V | BVECO |
| Collector Current | Detector | - | - | 50 | mA | IC |
| Electrical Characteristics (TA = 25C unless otherwise specified) | ||||||
| Forward Voltage | Emitter (IF=10mA) | - | 1.24 | 1.4 | V | VF |
| Reverse Current | Emitter (VR = 6V) | - | - | 5 | A | IR |
| Input Capacitance | Emitter (f=1MHz) | - | 10 | 30 | pF | CIN |
| Collector-Emitter Breakdown Voltage | Detector (IC= 100A) | 35 | - | - | V | BVCEO |
| Emitter-Collector Breakdown Voltage | Detector (IE= 100A) | 6 | - | - | V | BVECO |
| Collector-Emitter Dark Current | Detector (VCE= 20V, IF=0mA) | - | - | 100 | nA | ICEO |
| Current Transfer Ratio | CT817 (IF= 5mA, VCE= 5V) | 50 | - | 600 | % | CTR |
| Current Transfer Ratio | CT817A (IF= 5mA, VCE= 5V) | 80 | - | 160 | % | CTR |
| Current Transfer Ratio | CT817B (IF= 5mA, VCE= 5V) | 130 | - | 260 | % | CTR |
| Current Transfer Ratio | CT817C (IF= 5mA, VCE= 5V) | 200 | - | 400 | % | CTR |
| Current Transfer Ratio | CT817D (IF= 5mA, VCE= 5V) | 300 | - | 600 | % | CTR |
| Collector-Emitter Saturation Voltage | (IF= 20mA, IC= 1mA) | - | 0.1 | 0.2 | V | VCE(SAT) |
| Isolation Resistance | (VIO= 500VDC) | 5x1010 | - | - | RIO | |
| Isolation Capacitance | (f=1MHz) | - | 0.25 | 1 | pF | CIO |
| Switching Characteristics (IC= 2mA, VCE= 2V, RL= 100) | ||||||
| Rise Time | - | - | 6 | 18 | s | tr |
| Fall Time | - | - | 8 | 18 | s | tf |
2410121452_CT-MICRO-CT817B-SL-T3-H_C453466.pdf
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