CT MICRO CT827 SL T1 Dual Channel Phototransistor Optocoupler Featuring 8 Pin DIP Package and Performance

Key Attributes
Model Number: CT827(SL)(T1)
Product Custom Attributes
Rise Time:
6us@2mA,100Ω
Fall Time:
8us@2mA,100Ω
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@1mA,20mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Number Of Channels:
2
Mfr. Part #:
CT827(SL)(T1)
Package:
SOP-8-2.54mm
Product Description

Product Overview

The CT827 Series is a dual-channel phototransistor optocoupler featuring DC input and transistor output, housed in an 8-pin DIP package with various lead forming options. It offers high isolation of 5000 VRMS and operates within a wide temperature range of -55 C to 110 C. Designed for reliability and compliance with environmental standards like RoHS and REACH, this series is suitable for applications in switch-mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. It is compliant with multiple international regulatory approvals including UL, VDE, CQC, and IEC standards.

Product Attributes

  • Brand: CT Micro
  • Product Series: CT827 Series
  • Material Compliance: Green material, RoHS compliant, REACH compliance
  • Regulatory Approvals: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950

Technical Specifications

Symbol Parameters Ratings Units Notes
VISO Isolation voltage 5000 VRMS
PTOT Total power dissipation 200 mW
TOPR Operating temperature -55 ~ +110 C
TSTG Storage temperature -55 ~ +150 C
TSOL Soldering temperature 260 C
IF Forward current (Emitter) 60 mA
IF(TRANS) Peak transient current (Emitter) 1 A 1s P.W, 300pps
VR Reverse voltage (Emitter) 6 V
PD (Emitter) Emitter power dissipation 100 mW
PD (Detector) Detector power dissipation 150 mW
BVCEO Collector-Emitter Breakdown Voltage (Detector) 80 V
BVECO Emitter-Collector Breakdown Voltage (Detector) 7 V
IC Collector Current (Detector) 50 mA
VF Forward voltage (Emitter) 1.24 V IF=10mA
IR Reverse Current (Emitter) 5 A VR = 6V
CIN Input Capacitance (Emitter) 10 / 30 pF f=1MHz
BVCEO Collector-Emitter Breakdown Voltage (Detector) 80 V IC= 100A
BVECO Emitter-Collector Breakdown Voltage (Detector) 7 V IE= 100A
ICEO Collector-Emitter Dark Current (Detector) 100 nA VCE= 20V, IF=0mA
CTR Current Transfer Ratio 50 - 600% (CT827)
80 - 160% (CT827A)
130 - 260% (CT827B)
% IF= 5mA, VCE= 5V
VCE(SAT) Collector-Emitter Saturation Voltage 0.1 / 0.2 V IF= 20mA, IC= 1mA
RIO Isolation Resistance 5x1010 VIO= 500VDC
CIO Isolation Capacitance 0.5 / 1 pF f=1MHz
tr Rise Time 6 / 18 s IC= 2mA, VCE= 2V, RL= 100
tf Fall Time 8 / 18 s IC= 2mA, VCE= 2V, RL= 100

Note: Different lead forming options are available. Refer to package dimensions for details.

Device Marking: CT 827R VYWWK (CT: CT Micro, 827: Product Number, R: CTR Rank, V: VDE Option, Y: Fiscal Year, WW: Work Week, K: Production Code)

Ordering Information: CT827X(V)(Y)(Z)

  • X = Part No. (A, B or None)
  • V = VDE Option (V or None)
  • Y = Lead form option (S, SL, M or None)
  • Z = Tape and reel option (T1, T2 or None)

Available Options:

  • Standard 8 Pin Dip (40 Units/Tube)
  • M Gullwing (400mil) Lead Forming (40 Units/Tube)
  • S(T1) Surface Mount Lead Forming With Option 1 Taping (1000 Units/Reel)
  • S(T2) Surface Mount Lead Forming With Option 2 Taping (1000 Units/Reel)
  • SL(T1) Surface Mount (Low Profile) Lead Forming With Option 1 Taping (1000 Units/Reel)
  • SL(T2) Surface Mount (Low Profile) Lead Forming With Option 2 Taping (1000 Units/Reel)

2411271911_CT-MICRO-CT827-SL-T1_C453467.pdf

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