DC input optocoupler CT MICRO CTH217B T1 with operating temperature from minus 55 to 125 degrees Celsius
Key Attributes
Model Number:
CTH217B(T1)
Product Custom Attributes
Rise Time:
9us
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+125℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
130%;260%
Forward Current(If):
50mA
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
CTH217B(T1)
Package:
SOP-4-1.27mm
Product Description
Product Overview
The CTH217 Series is a general-purpose DC input optocoupler featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode. Housed in a 4-lead half pitch Mini-Flat package, this series offers high isolation of 3750 VRMS and a wide operating temperature range of -55 C to 125 C. It is suitable for applications requiring high density mounting, such as DC-DC converters, programmable controllers, and telecommunication equipment. The series is compliant with RoHS, REACH, and Halogen regulations and holds multiple regulatory approvals including UL, VDE, CQC, and IEC standards.
Product Attributes
- Brand: CT Micro
- Series: CTH217
- Package Type: 4-Pin Half Pitch Mini-Flat
- Compliance: RoHS, REACH, Halogen
- Regulatory Approvals: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
Technical Specifications
| Symbol | Parameters | Ratings | Units | Notes |
|---|---|---|---|---|
| Absolute Maximum Rating at 25C | ||||
| VISO | Isolation voltage | 3750 | VRMS | |
| TOPR | Operating temperature | -55 ~ +125 | C | |
| TSTG | Storage temperature | -55 ~ +150 | C | |
| TSOL | Soldering temperature | 260 | C | |
| PTOT | Total power dissipation | 200 | mW | |
| IF (Emitter) | Forward current | 50 | mA | |
| IF(TRANS) | Peak transient current (1s P.W,300pps) | 1 | A | |
| VR (Emitter) | Reverse voltage | 6 | V | |
| PD (Emitter) | Power dissipation | 70 | mW | |
| PC (Detector) | Power dissipation | 150 | mW | |
| BVCEO | Collector-Emitter Breakdown Voltage | 80 | V | |
| BVECO | Emitter-Collector Breakdown Voltage | 7 | V | |
| IC (Detector) | Collector Current | 50 | mA | |
| Electrical Characteristics TA = 25C (unless otherwise specified) | ||||
| Emitter Characteristics | ||||
| VF | Forward voltage | 1.24 Typ. 1.4 Max. | V | IF=10mA |
| IR | Reverse Current | - - 5 Max. | A | VR = 6V |
| CIN | Input Capacitance | - 10 Typ. 30 Max. | pF | f= 1MHz |
| Detector Characteristics | ||||
| BVCEO | Collector-Emitter Breakdown Voltage | 80 - - | V | IC= 0.1mA |
| BVECO | Emitter-Collector Breakdown Voltage | 7 - - | V | IE= 0.1mA |
| ICEO | Collector-Emitter Dark Current | - - 100 Max. | nA | VCE= 20V, IF=0mA |
| Transfer Characteristics | ||||
| CTR | Current Transfer Ratio | 50 Min. 600 Max. (CTH217) 80 Min. 160 Max. (CTH217A) 130 Min. 260 Max. (CTH217B) 200 Min. 400 Max. (CTH217C) 300 Min. 600 Max. (CTH217D) | % | IF= 5mA, VCE= 5V |
| VCE(SAT) | Collector-Emitter Saturation Voltage | - 0.1 Typ. 0.2 Max. | V | IF= 20mA, IC= 1mA |
| RIO | Isolation Resistance | 5x1010 | VIO= 500VDC | |
| CIO | Isolation Capacitance | 0.5 Typ. 1 Max. | pF | f= 1MHz |
| Switching Characteristics | ||||
| tr | Rise Time | - 6 Typ. 18 Max. | s | IC= 2mA, VCE= 2V, RL= 100 |
| tf | Fall Time | - 8 Typ. 18 Max. | s | |
2410121536_CT-MICRO-CTH217B-T1_C453468.pdf
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