4 pin long mini flat phototransistor optocoupler CT MICRO CT1018V T1 W designed for signal isolation

Key Attributes
Model Number: CT1018(V)(T1)-W
Product Custom Attributes
Rise Time:
4.8us
Fall Time:
4us
Output Current:
50mA
Vce Saturation(VCE(sat)):
400mV@10mA,1mA
Operating Temperature:
-55℃~+125℃
Load Voltage:
80V
Reverse Voltage:
6V
Load Type:
Phototransistor
Current Transfer Ratio:
22%;320%
Forward Current(If):
50mA
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Number Of Channels:
1
Mfr. Part #:
CT1018(V)(T1)-W
Package:
SOP-4-2.54mm
Product Description

Product Overview

The CT1010-W series of 4-Pin Long Mini-Flat Phototransistor Optocouplers offers high isolation (5000 VRMS) and a DC input with a transistor output. These optocouplers are designed for applications requiring reliable signal isolation, such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. They feature a green package and are available with flexible CTR options. The series operates within a temperature range of -55 C to 125 C and provides external creepage distance greater than 8 mm.

Product Attributes

  • Brand: CT Micro
  • Package Type: 4-Pin Long Mini-Flat SOP
  • Color: Green Package
  • Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950

Technical Specifications

Model Parameter Test Conditions Min Typ Max Units
All Models Isolation Voltage (VISO) 5000 VRMS
Operating Temperature (TOPR) -55 +125 C
Storage Temperature (TSTG) -55 +150 C
Soldering Temperature (TSOL) 260 C
Forward Current (IF) 50 mA
Peak Transient Current (IF(TRANS)) (1s P.W, 300pps) 1 A
Reverse Voltage (VR) 6 V
Emitter Power Dissipation (PD) 85 mW
Detector Power Dissipation (PC) 150 mW
Collector-Emitter Breakdown Voltage (BVCEO) 80 V
Emitter-Collector Breakdown Voltage (BVECO) 7 V
Collector Current (IC) 50 mA
Thermal Resistance Junction-Ambient (RJA) 445 /W
Junction Temperature (TJ) 125
Forward Voltage (VF) IF=10mA 1.26 1.4 V
Forward Voltage (VF) IF=50mA 1.42 1.5 V
Reverse Current (IR) VR = 6V 5 A
Input Capacitance (CIN) f= 1kHz 45 pF
Collector-Emitter Breakdown Voltage (BVCEO) IC= 100A 80 V
Emitter-Collector Breakdown Voltage (BVECO) IE= 100A 7 V
Collector-Emitter Dark Current (ICEO) VCE= 20V, IF= 0mA 100 nA
CT1012-W Current Transfer Ratio (CTR) IF= 1mA, VCE= 5V 22 - %
CT1013-W Current Transfer Ratio (CTR) IF= 1mA, VCE= 5V 34 - %
CT1014-W Current Transfer Ratio (CTR) IF= 1mA, VCE= 5V 56 - %
CT1011-W Current Transfer Ratio (CTR) IF= 10mA, VCE= 5V 60 300 %
CT1012-W Current Transfer Ratio (CTR) IF= 10mA, VCE= 5V 63 125 %
CT1013-W Current Transfer Ratio (CTR) IF= 10mA, VCE= 5V 100 200 %
CT1014-W Current Transfer Ratio (CTR) IF= 10mA, VCE= 5V 160 320 %
CT1010-W Current Transfer Ratio (CTR) IF= 5mA, VCE= 5V 50 600 %
CT1015-W Current Transfer Ratio (CTR) IF= 5mA, VCE= 5V 50 150 %
CT1016-W Current Transfer Ratio (CTR) IF= 5mA, VCE= 5V 100 300 %
CT1017-W Current Transfer Ratio (CTR) IF= 5mA, VCE= 5V 80 160 %
CT1018-W Current Transfer Ratio (CTR) IF= 5mA, VCE= 5V 130 260 %
CT1019-W Current Transfer Ratio (CTR) IF= 5mA, VCE= 5V 200 400 %
Collector-Emitter Saturation Voltage (VCE(SAT)) IF= 10mA, IC= 1mA 0.4 V
Isolation Resistance (RIO) VIO= 500VDC 5x1010
Isolation Capacitance (CIO) f= 1MHz 1 pF
All Models Turn On Time (TON) IC= 5mA, VCE= 5V, RL= 100 - 4.8 22 s
Turn Off Time (TOFF) - 4.2 22 s
Rise Time (tr) - 2.7 18 s
Fall Time (tf) - 4 18 s

2410121452_CT-MICRO-CT1018-V-T1-W_C453472.pdf

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