Phototransistor Optocoupler 4 Pin DIP Package CT MICRO CT816D3 SL T3 for Switch Mode Power Supplies
Key Attributes
Model Number:
CT816D3(SL)(T3)
Product Custom Attributes
Rise Time:
6us@2mA,100Ω
Fall Time:
8us@2mA,100Ω
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@1mA,20mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Number Of Channels:
1
Mfr. Part #:
CT816D3(SL)(T3)
Package:
SOP-4-2.54mm
Product Description
Product Overview
The CT816D3 is a DC input 4-pin phototransistor optocoupler designed for applications requiring high isolation. It features a phototransistor optically coupled to a gallium arsenide infrared-emitting diode, available in a 4-lead DIP package with various bending options. This series offers CTR flexibility and operates reliably across a wide temperature range of -55 C to 110 C, making it suitable for switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.
Product Attributes
- Brand: CT Micro
- Product Type: Phototransistor Optocoupler
- Input Type: DC Input
- Output Type: Transistor Output
- Package Type: 4-Pin DIP
- Material Option: Green (G) or Non-green
- Lead Frame Option: Iron (H) or Copper (None)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| Isolation Voltage | VISO | 5000 | VRMS | ||||
| Total Power Dissipation | PTOT | 200 | mW | ||||
| Operating Temperature | TOPR | -55 | 110 | C | |||
| Storage Temperature | TSTG | -55 | 150 | C | |||
| Soldering Temperature | TSOL | 260 | C | ||||
| Emitter Characteristics | |||||||
| Forward Current | IF | 60 | mA | ||||
| Peak Transient Current | IF(TRANS) | 1s P.W, 300pps | 1 | A | |||
| Reverse Voltage | VR | 6 | V | ||||
| Emitter Power Dissipation | PD | 100 | mW | ||||
| Detector Characteristics | |||||||
| Collector-Emitter Breakdown Voltage | BVCEO | 80 | V | ||||
| Emitter-Collector Breakdown Voltage | BVECO | 6 | V | ||||
| Collector Current | IC | 50 | mA | ||||
| Detector Power Dissipation | PD | 150 | mW | ||||
| Electrical Characteristics (TA = 25C unless otherwise specified) | |||||||
| Forward Voltage | VF | IF=10mA | 1.24 | 1.4 | V | ||
| Reverse Current | IR | VR = 6V | 5 | A | |||
| Input Capacitance | CIN | f=1MHz | 30 | pF | |||
| Collector-Emitter Breakdown Voltage | BVCEO | IC= 100A | 80 | V | |||
| Emitter-Collector Breakdown Voltage | BVECO | IE= 100A | 6 | V | |||
| Collector-Emitter Dark Current | ICEO | VCE= 20V, IF=0mA | 100 | nA | |||
| Current Transfer Ratio | CTR | IF= 5mA, VCE= 5V | 300 | 450 | % | ||
| Current Transfer Ratio | CTR | IF= 0.1mA, VCE= 0.4V | 10 | 30 | % | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IF= 20mA, IC= 1mA | 0.1 | 0.2 | V | ||
| Isolation Resistance | RIO | VIO= 500VDC | 5x1010 | ||||
| Isolation Capacitance | CIO | f=1MHz | 0.5 | 1 | pF | ||
| Switching Characteristics | |||||||
| Rise Time | tr | IC= 2mA, VCE= 2V, RL= 100 | 6 | s | |||
| Fall Time | tf | 8 | s | ||||
2411272331_CT-MICRO-CT816D3-SL-T3_C2940728.pdf
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