General purpose optocoupler CT MICRO CTH217B V T1 with 3750 VRMS isolation and multiple CTR options
Product Overview
The CTH217 Series is a general-purpose optocoupler featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode. Housed in a 4-lead half pitch Mini-Flat package, this series offers high isolation of 3750 VRMS and a wide operating temperature range of -55C to 125C. Available with multiple CTR selections, it is suitable for applications such as DC-DC converters, programmable controllers, telecommunication equipment, and hybrid substrates requiring high-density mounting. The product complies with RoHS, REACH, and Halogen regulations and has obtained various regulatory approvals including UL, VDE, CQC, and IEC standards.
Product Attributes
- Brand: CT Micro
- Series: CTH217 Series
- Package Type: 4-Pin Half Pitch Mini-Flat
- Compliance: RoHS, REACH, Halogen
- Regulatory Approvals: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
Technical Specifications
| Parameter | Model | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Rating at 25C | ||||||
| Isolation Voltage | 3750 | VRMS | ||||
| Operating Temperature | -55 | +125 | C | |||
| Storage Temperature | -55 | +150 | C | |||
| Soldering Temperature | 260 | C | ||||
| Total Power Dissipation | 200 | mW | ||||
| Emitter Forward Current | 50 | mA | ||||
| Emitter Peak Transient Current | 1 | A | (1s P.W, 300pps) | |||
| Emitter Reverse Voltage | 6 | V | ||||
| Emitter Power Dissipation | 70 | mW | ||||
| Detector Power Dissipation | 150 | mW | ||||
| Collector-Emitter Breakdown Voltage | 80 | V | ||||
| Emitter-Collector Breakdown Voltage | 7 | V | ||||
| Collector Current | 50 | mA | ||||
| Electrical Characteristics at TA = 25C (unless otherwise specified) | ||||||
| Emitter Characteristics | ||||||
| Forward Voltage | 1.24 | 1.4 | V | IF=10mA | ||
| Reverse Current | 5 | A | VR = 6V | |||
| Input Capacitance | 10 | 30 | pF | f= 1MHz | ||
| Detector Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | 80 | V | IC= 0.1mA | |||
| Emitter-Collector Breakdown Voltage | 7 | V | IE= 0.1mA | |||
| Collector-Emitter Dark Current | 100 | nA | VCE= 20V, IF=0mA | |||
| Transfer Characteristics | ||||||
| Current Transfer Ratio (CTR) | CTH217 | 50 | 600 | % | IF= 5mA, VCE= 5V | |
| Current Transfer Ratio (CTR) | CTH217A | 80 | 160 | % | IF= 5mA, VCE= 5V | |
| Current Transfer Ratio (CTR) | CTH217B | 130 | 260 | % | IF= 5mA, VCE= 5V | |
| Current Transfer Ratio (CTR) | CTH217C | 200 | 400 | % | IF= 5mA, VCE= 5V | |
| Current Transfer Ratio (CTR) | CTH217D | 300 | 600 | % | IF= 5mA, VCE= 5V | |
| Collector-Emitter Saturation Voltage | 0.1 | 0.2 | V | IF= 20mA, IC= 1mA | ||
| Isolation Resistance | 5x1010 | VIO= 500VDC | ||||
| Isolation Capacitance | 0.5 | 1 | pF | f= 1MHz | ||
| Switching Characteristics | ||||||
| Rise Time | 6 | 18 | s | IC= 2mA, VCE= 2V, RL= 100 | ||
| Fall Time | 8 | 18 | s | |||
2410121536_CT-MICRO-CTH217B-V-T1_C2940730.pdf
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