General purpose DC input phototransistor optocoupler CT MICRO CT357B T1 with 4 pin mini flat package

Key Attributes
Model Number: CT357B(T1)
Product Custom Attributes
Rise Time:
9us
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
60mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
130%;260%
Forward Current(If):
50mA
Pd - Power Dissipation:
200mW
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
CT357B(T1)
Package:
SOP-4-2.54mm
Product Description

Product Overview

The CT357 Series is a general-purpose, DC input phototransistor optocoupler featuring a 4-pin Mini-Flat package. It offers high isolation of 3750 VRMS and a wide operating temperature range of -55 C to 110 C. Available with multiple Current Transfer Ratio (CTR) selections, this optocoupler is suitable for applications such as DC-DC converters, programmable controllers, telecommunication equipment, and hybrid substrates requiring high-density mounting. The product is manufactured with a green package and holds various regulatory approvals including UL, VDE, CQC, and IEC standards.

Product Attributes

  • Brand: CT Micro
  • Series: CT357
  • Package Type: 4-Pin Mini-Flat
  • Input Type: DC Input
  • Output Type: Phototransistor Output
  • Color: Green Package
  • Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950

Technical Specifications

Parameter Rating Units Notes
Absolute Maximum Ratings (at 25C)
Isolation Voltage (VISO) 3750 VRMS
Operating Temperature (TOPR) -55 ~ +110 C
Storage Temperature (TSTG) -55 ~ +150 C
Soldering Temperature (TSOL) 260 C
Total Power Dissipation (PTOT) 200 mW
Emitter Characteristics
Forward Current (IF) 50 mA
Peak Transient Current (IF(TRANS)) 1 A 1s P.W, 300pps
Reverse Voltage (VR) 6 V
Power Dissipation (PD) 70 mW
Detector Characteristics
Power Dissipation (PC) 150 mW
Collector-Emitter Breakdown Voltage (BVCEO) 80 V
Emitter-Collector Breakdown Voltage (BVECO) 6 V
Collector Current (IC) 50 mA
Electrical Characteristics (TA = 25C unless otherwise specified)
Forward Voltage (VF) 1.24 (Typ) V IF=10mA
Reverse Current (IR) - (Max) 5 A VR = 6V
Input Capacitance (CIN) - (Typ) 30 pF f=1MHz
Collector-Emitter Breakdown Voltage (BVCEO) 80 V IC= 100A
Emitter-Collector Breakdown Voltage (BVECO) 7 V IE= 1mA
Collector-Emitter Dark Current (ICEO) - (Max) 100 nA VCE= 20V, IF=0mA
Transfer Characteristics
Current Transfer Ratio (CTR) CT357 50 (Min) - 600 (Max) % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT357A 80 (Min) - 160 (Max) % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT357B 130 (Min) - 260 (Max) % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT357C 200 (Min) - 400 (Max) % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT357D 300 (Min) - 600 (Max) % IF= 5mA, VCE= 5V
Collector-Emitter Saturation Voltage (VCE(SAT)) - (Typ) 0.06 - (Max) 0.2 V IF= 20mA, IC= 1mA
Isolation Resistance (RIO) 5x1010 VIO= 500VDC
Isolation Capacitance (CIO) - (Typ) 0.5 - (Max) 1 pF f=1MHz
Switching Characteristics
Rise Time (tr) - (Typ) 6 s IC= 2mA, VCE= 2V, RL= 100
Fall Time (tf) - (Typ) 8 s IC= 2mA, VCE= 2V, RL= 100

2410121508_CT-MICRO-CT357B-T1_C127189.pdf

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