4 Pin DC Input Phototransistor Optocoupler CT MICRO CT817B-H Designed for Computer Peripheral Interfaces
Key Attributes
Model Number:
CT817B-H
Product Custom Attributes
Rise Time:
6us@2mA,100Ω
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@1mA,20mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Current Transfer Ratio:
130%;260%
Forward Current(If):
60mA
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
CT817B-H
Package:
DIP-4
Product Description
Product Overview
The CT817 Series is a DC input 4-pin phototransistor optocoupler designed for high isolation applications. It features a gallium arsenide infrared-emitting diode optically coupled to a phototransistor within a 4-lead DIP package, with various lead forming options available. This series offers high isolation voltage up to 5000 VRMS and a wide operating temperature range from -55 C to 110 C. It is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.
Product Attributes
- Brand: CT Micro
- Product Series: CT817 Series
- Type: DC Input 4-Pin Phototransistor Optocoupler
- Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Package Type: 4-lead DIP
- Lead Forming Options: Standard DIP, Gullwing (400mil), Through Hole (M Type), Surface Mount (S Type), Surface Mount (Low Profile) (SL Type), Surface Mount (Gullwing) (SLM Type)
- Material Option: Green (G) or Non-green
- Lead Frame Option: Iron (H) or Copper
Technical Specifications
| Parameter | Rating | Unit | Notes |
|---|---|---|---|
| Absolute Maximum Ratings (at 25C) | |||
| Isolation Voltage (VISO) | 5000 | VRMS | |
| Total Power Dissipation (PTOT) | 200 | mW | |
| Operating Temperature (TOPR) | -55 ~ +110 | C | |
| Storage Temperature (TSTG) | -55 ~ +150 | C | |
| Soldering Temperature (TSOL) | 260 | C | |
| Emitter Characteristics | |||
| Forward Current (IF) | 60 | mA | |
| Peak Transient Current (IF(TRANS)) | 1 | A | (1s P.W, 300pps) |
| Reverse Voltage (VR) | 6 | V | |
| Emitter Power Dissipation (PD) | 100 | mW | |
| Detector Characteristics | |||
| Collector-Emitter Breakdown Voltage (BVCEO) | 35 | V | (IC= 100A) |
| Emitter-Collector Breakdown Voltage (BVECO) | 6 | V | (IE= 100A) |
| Collector Current (IC) | 50 | mA | |
| Detector Power Dissipation (PD) | 150 | mW | |
| Electrical Characteristics (TA = 25C unless otherwise specified) | |||
| Forward Voltage (VF) | - 1.24 1.4 | V | (IF=10mA) |
| Reverse Current (IR) | - - 5 | A | (VR = 6V) |
| Input Capacitance (CIN) | - 10 30 | pF | (f=1MHz) |
| Collector-Emitter Dark Current (ICEO) | - - 100 | nA | (VCE= 20V, IF=0mA) |
| Transfer Characteristics | |||
| Current Transfer Ratio (CTR) CT817 | 50 - 600 | % | (IF= 5mA, VCE= 5V) |
| Current Transfer Ratio (CTR) CT817A | 80 - 160 | % | (IF= 5mA, VCE= 5V) |
| Current Transfer Ratio (CTR) CT817B | 130 - 260 | % | (IF= 5mA, VCE= 5V) |
| Current Transfer Ratio (CTR) CT817C | 200 - 400 | % | (IF= 5mA, VCE= 5V) |
| Current Transfer Ratio (CTR) CT817D | 300 - 600 | % | (IF= 5mA, VCE= 5V) |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | - 0.1 0.2 | V | (IF= 20mA, IC= 1mA) |
| Isolation Resistance (RIO) | 5x1010 | (VIO= 500VDC) | |
| Isolation Capacitance (CIO) | - 0.25 1 | pF | (f=1MHz) |
| Switching Characteristics | |||
| Rise Time (tr) | - 6 18 | s | (IC= 2mA, VCE= 2V, RL= 100) |
| Fall Time (tf) | - 8 18 | s | (IC= 2mA, VCE= 2V, RL= 100) |
2410121452_CT-MICRO-CT817B-H_C127187.pdf
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