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quality CT MICRO CT1017V T1 W HZD 4 pin long mini flat phototransistor optocoupler DC input for signal isolation factory
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quality CT MICRO CT1017V T1 W HZD 4 pin long mini flat phototransistor optocoupler DC input for signal isolation factory
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CT MICRO CT1017V T1 W HZD 4 pin long mini flat phototransistor optocoupler DC input for signal isolation

Specifications
Rise time:
4.8us
Fall time:
4.2us
Output Current:
50mA
Vce Saturation(VCE(sat)):
400mV@10mA,1mA
Operating Temperature:
-55℃~+125℃
Load Voltage:
80V
Reverse Voltage:
6V
Current transfer ratio:
80%;160%
Forward Current(If):
50mA
Pd - Power Dissipation:
-
Number of Channels:
-
Load Type:
Phototransistor
Input type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
CT1017(V)(T1)-W(HZD)
Package:
SOP-4-2.54mm
Key Attributes
Model Number: CT1017(V)(T1)-W(HZD)
Product Description

Product Overview

The CT1010-W series is a family of DC input, 4-pin long mini-flat phototransistor optocouplers designed for high isolation applications. These optocouplers feature a phototransistor optically coupled to a gallium arsenide infrared-emitting diode, offering high isolation voltage (5000 VRMS) and low coupling capacitance. They are suitable for use in switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces, providing reliable signal isolation in demanding environments.

Product Attributes

  • Brand: CT Micro
  • Package Type: 4-Pin Long Mini-Flat SOP
  • Input Type: DC Input
  • Output Type: Transistor Output
  • Material: Green Package
  • Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
  • Temperature Range: -55 C to 125 C
  • External Creepage Distance: > 8 mm
  • Internal Creepage Distance: > 4.6 mm
  • Distances Through Insulation: > 0.4 mm

Technical Specifications

Model Parameter Test Conditions Min Typ Max Units
All Models Isolation Voltage (VISO) 5000 VRMS
Operating Temperature (TOPR) -55 125 C
Storage Temperature (TSTG) -55 150 C
Soldering Temperature (TSOL) 260 C
Forward Current (IF) 50 mA
Peak Transient Current (IF(TRANS)) (1s P.W,300pps) 1 A
Reverse Voltage (VR) 6 V
Power Dissipation (Emitter) (PD) 85 mW
Power Dissipation (Detector) (PC) 150 mW
Collector-Emitter Breakdown Voltage (BVCEO) 80 V
Emitter-Collector Breakdown Voltage (BVECO) 7 V
Collector Current (IC) 50 mA
Thermal Resistance Junction-Ambient (RJA) 445 /W
Junction Temperature (TJ) 125
Forward Voltage (VF) IF=10mA 1.26 1.4 V
Forward Voltage (VF) IF=50mA 1.42 1.5 V
Reverse Current (IR) VR = 6V - 5 A
Input Capacitance (CIN) f= 1kHz 45 pF
Collector-Emitter Dark Current (ICEO) VCE= 20V, IF= 0mA - - 100 nA
Isolation Resistance (RIO) VIO= 500VDC 5x1010
Isolation Capacitance (CIO) f= 1MHz 1 pF
Turn On Time (TON) IC= 5mA, VCE= 5V, RL= 100 - 4.8 22 s
Turn Off Time (TOFF) - 4.2 22 s
Rise Time (tr) - 2.7 18 s
Fall Time (tf) - 4 18 s
CT1010-W CTR IF= 5mA, VCE= 5V 50 600 %
CT1011-W CTR IF= 10mA, VCE= 5V 60 300 %
CT1012-W CTR IF= 1mA, VCE= 5V 22 - %
CT1012-W CTR IF= 10mA, VCE= 5V 63 125 %
CT1013-W CTR IF= 1mA, VCE= 5V 34 - %
CT1013-W CTR IF= 10mA, VCE= 5V 100 200 %
CT1014-W CTR IF= 1mA, VCE= 5V 56 - %
CT1014-W CTR IF= 10mA, VCE= 5V 160 320 %
CT1015-W CTR IF= 5mA, VCE= 5V 50 150 %
CT1016-W CTR IF= 5mA, VCE= 5V 100 300 %
CT1017-W CTR IF= 5mA, VCE= 5V 80 160 %
CT1018-W CTR IF= 5mA, VCE= 5V 130 260 %
CT1019-W CTR IF= 5mA, VCE= 5V 200 400 %
Collector-Emitter Saturation Voltage (VCE(SAT)) IF= 10mA, IC= 1mA - - 0.4 V

2304140030_CT-MICRO-CT1017-V-T1-W-HZD_C191449.pdf

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