DC Input 6 Pin Phototransistor Optocoupler Featuring CT Micro 4N25 with 5000 VRMS Isolation Voltage
Key Attributes
Model Number:
4N25
Product Custom Attributes
Rise Time:
4.3us
Fall Time:
3.9us
Output Current:
-
Vce Saturation(VCE(sat)):
500mV@50mA,2mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
-;20%
Forward Current(If):
60mA
Pd - Power Dissipation:
150mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
4N25
Package:
DIP-6
Product Description
Product Overview
The CT Micro 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38, H11A1, H11A2, H11A3, H11A4, and H11A5 series are 6-pin phototransistor optocouplers featuring DC input and transistor output. These devices offer high isolation of 5000 VRMS and operate within a temperature range of -55 C to 110 C. They are suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. Various lead forming options and tape and reel packaging are available for different mounting and handling requirements.
Product Attributes
- Brand: CT Micro
- Product Type: DC Input 6-Pin Phototransistor Optocoupler
- Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Material Option: Green (G) or Non-green
Technical Specifications
| Model(s) | Parameter | Rating | Units | Notes |
|---|---|---|---|---|
| All | Isolation Voltage (VISO) | 5000 | VRMS | |
| Operating Temperature (TOPR) | -55 ~ +110 | C | ||
| Storage Temperature (TSTG) | -55 ~ +150 | C | ||
| Soldering Temperature (TSOL) | 260 | C | ||
| Isolation Resistance (RIO) | 1x1011 | VIO= 500VDC | ||
| Isolation Capacitance (CIO) | 0.25 | pF | f= 1MHz | |
| Emitter Forward Voltage (VF) | 1.24 - 1.4 | V | IF=10mA | |
| All | Emitter Forward Current (IF) | 60 | mA | |
| Emitter Peak Transient Current | 1 | A | (1s P.W,300pps) | |
| All | Emitter Reverse Voltage (VR) | 6 | V | |
| Emitter Power Dissipation (PD) | 100 | mW | ||
| All | Detector Power Dissipation (PD) | 150 | mW | |
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | IC= 0.1mA | |
| All | Collector-Base Breakdown Voltage (BVCBO) | 80 | V | IC= 0.1mA |
| Emitter-Collector Breakdown Voltage (BVECO) | 7 | V | IE= 0.1mA | |
| All | Emitter-Base Breakdown Voltage (BVEBO) | 7 | V | |
| Collector-Emitter Dark Current (ICEO) | - - 50 | nA | 4N25-28, H11A1-5 (VCE= 10V, IF=0mA); 4N35-38 (VCE=60V, IF=0mA) | |
| All | Collector-Base Dark Current (ICBO) | - - 20 | nA | VCB= 10V, IF=0mA |
| 4N35 | Current Transfer Ratio (CTR) | 100 | % | IF= 10mA, VCE= 10V |
| 4N25,4N26, 4N38, H11A2, H11A3 | Current Transfer Ratio (CTR) | 20 | % | IF= 10mA, VCE= 10V |
| 4N27, 4N28, H11A4 | Current Transfer Ratio (CTR) | 10 | % | IF= 10mA, VCE= 10V |
| H11A1 | Current Transfer Ratio (CTR) | 50 | % | IF= 10mA, VCE= 10V |
| H11A5 | Current Transfer Ratio (CTR) | 30 | % | IF= 10mA, VCE= 10V |
| 4N36 | Current Transfer Ratio (CTR) | 130 - 260 | % | IF= 2mA, VCE= 5V |
| 4N37 | Current Transfer Ratio (CTR) | 200 - 400 | % | IF= 2mA, VCE= 5V |
| 4N25,4N26, 4N27,4N28 | Collector-Emitter Saturation Voltage (VCE(SAT)) | - - 0.5 | V | IF= 50mA, IC= 2mA |
| 4N35,4N36,4N37 | Collector-Emitter Saturation Voltage (VCE(SAT)) | - - 0.3 | V | IF= 10mA, IC= 0.5mA |
| H11A1,H11A2, H11A3,H11A4,H11A5 | Collector-Emitter Saturation Voltage (VCE(SAT)) | - - 0.4 | V | IF= 10mA, IC= 0.5mA |
| 4N38 | Collector-Emitter Saturation Voltage (VCE(SAT)) | - - 1.0 | V | IF= 20mA, IC= 4mA |
| 4N25,4N26,4N27,4N28, H11A1,A2,A3,A4,A5 | Turn On Time (ton) | - 4.3 - 9.8 | s | IF= 10mA, VCC= 10V, RL= 100 |
| 4N35,4N36,4N37,4N38 | Turn On Time (ton) | - 9.8 - 11.5 | s | Ic= 2mA, VCC= 10V, RL= 100 |
| 4N25,4N26,4N27,4N28, H11A1,A2,A3,A4,A5 | Turn Off Time (toff) | - 3.9 - 9.8 | s | IF= 10mA, VCC= 10V, RL= 100 |
| 4N35,4N36,4N37,4N38 | Turn Off Time (toff) | - 6.9 - 11.5 | s | Ic= 2mA, VCC= 10V, RL= 100 |
2410121442_CT-MICRO-4N25_C191858.pdf
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