Phototransistor Optocoupler CT MICRO 4N35 6 Pin DIP with Wide Temperature Range and High Isolation Voltage
Key Attributes
Model Number:
4N35
Product Custom Attributes
Fall Time:
6.9us
Rise Time:
9.8us
Output Current:
-
Vce Saturation(VCE(sat)):
300mV@50mA,2mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Load Type:
Phototransistor
Current Transfer Ratio:
-;100%
Forward Current(If):
60mA
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Number Of Channels:
1
Mfr. Part #:
4N35
Package:
DIP-6
Product Description
Product Overview
The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38, H11A1, H11A2, H11A3, H11A4, and H11A5 series are DC input 6-pin phototransistor optocouplers designed for applications requiring high isolation. These optocouplers feature a phototransistor optically coupled to a gallium arsenide infrared-emitting diode, suitable for switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. They offer high isolation voltage of 5000 VRMS and an operating temperature range of -55 C to 110 C.
Product Attributes
- Brand: CT Micro
- Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Package Type: 6-Pin DIP
- Material Option: Green (G) or Non-green
Technical Specifications
| Model(s) | Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38, H11A1, H11A2, H11A3, H11A4, H11A5 | Isolation Voltage (VISO) | 5000 | VRMS | |||
| Operating Temperature (TOPR) | -55 | 110 | C | |||
| Storage Temperature (TSTG) | -55 | 150 | C | |||
| Soldering Temperature (TSOL) | 260 | C | ||||
| Forward Current (IF) | 60 | mA | ||||
| Peak Transient Current (IF(TRANS)) | (1s P.W,300pps) | 1 | A | |||
| Reverse Voltage (VR) | 6 | V | ||||
| Emitter Power Dissipation (PD) | 100 | mW | ||||
| Detector Power Dissipation (PD) | 150 | mW | ||||
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | - | - | V | ||
| Collector-Base Breakdown Voltage (BVCBO) | 80 | - | - | V | ||
| Emitter-Collector Breakdown Voltage (BVECO) | 7 | - | - | V | ||
| Emitter-Base Breakdown Voltage (BVEBO) | 7 | - | - | V | ||
| Forward Voltage (VF) | IF=10mA | 1.24 | 1.4 | V | ||
| Reverse Current (IR) | VR = 6V | - | - | 5 | A | |
| Input Capacitance (CIN) | f=1MHz | - | 45 | - | pF | |
| Collector-Emitter Dark Current (ICEO) | 4N25-4N28, H11A1-A5 VCE= 10V, IF=0mA | - | - | 50 | nA | |
| Collector-Emitter Dark Current (ICEO) | 4N35-4N38 VCE=60V, IF=0mA | - | - | 50 | nA | |
| Collector-Base Dark Current (ICBO) | VCB= 10V, IF=0mA | - | - | 20 | nA | |
| Current Transfer Ratio (CTR) | 4N35, 4N36, 4N37 | IF= 10mA, VCE= 10V | 100 | - | - | % |
| 4N25,4N26, 4N38, H11A2, H11A3 | IF= 10mA, VCE= 10V | 20 | - | - | % | |
| 4N27, 4N28, H11A4 | IF= 10mA, VCE= 10V | 10 | - | - | % | |
| H11A1 | IF= 10mA, VCE= 10V | 50 | - | - | % | |
| H11A5 | IF= 10mA, VCE= 10V | 30 | - | - | % | |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | 4N25,4N26, 4N27,4N28 | IF= 50mA, IC= 2mA | - | - | 0.5 | V |
| 4N35,4N36,4N37 | IF= 10mA, IC= 0.5mA | - | - | 0.3 | V | |
| H11A1,H11A2, H11A3,H11A4,H11A5 | IF= 10mA, IC= 0.5mA | - | - | 0.4 | V | |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | 4N38 | IF= 20mA, IC= 4mA | - | - | 1.0 | V |
| Isolation Resistance (RIO) | VIO= 500VDC | 1x1011 | - | - | ||
| Isolation Capacitance (CIO) | f=1MHz | - | 0.25 | - | pF | |
| Turn On Time (ton) | 4N25-4N28, H11A1-A5 | IF= 10mA, VCC= 10V, RL= 100 | - | 4.3 | 9.8 | s |
| 4N35-4N38 | Ic= 2mA, VCC= 10V, RL= 100 | - | 9.8 | 11.5 | s | |
| Turn Off Time (toff) | 4N25-4N28, H11A1-A5 | IF= 10mA, VCC= 10V, RL= 100 | - | 3.9 | 9.8 | s |
| 4N35-4N38 | Ic= 2mA, VCC= 10V, RL= 100 | - | 6.9 | 11.5 | s |
2410121442_CT-MICRO-4N35_C191861.pdf
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