DC DIP Phototransistor Optocoupler CT MICRO CT521GB with Pending UL VDE CQC IEC Certifications
Key Attributes
Model Number:
CT521GB
Product Custom Attributes
Output Current:
80mA
Fall Time:
16us
Rise Time:
16us
Vce Saturation(VCE(sat)):
400mV@1mA,0.2mA
Operating Temperature:
-55℃~+125℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
600%;100%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5.3kV
Mfr. Part #:
CT521GB
Package:
DIP-4
Product Description
Product Overview
The CT521-1GB is a DC DIP Phototransistor Optocoupler from CT Micro, featuring high isolation of 5300 VRMS and a wide operating temperature range of -55 C to 125 C. It consists of a photo transistor optically coupled to a gallium arsenide Infrared-emitting diode within a DIP package. This optocoupler is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. It is RoHS compliant, REACH compliant, and halogen-free, with pending regulatory approvals from UL, VDE, CQC, and IEC.
Product Attributes
- Brand: CT Micro
- Product Type: DC DIP Phototransistor Optocoupler
- Compliance: RoHS, REACH, Halogen Free
- Regulatory Approvals (Pending): UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC60065, IEC60950
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Rating | ||||||
| Isolation voltage | 5300 | VRMS | ||||
| Total power dissipation | 200 | mW | ||||
| Operating temperature | -55 | 125 | C | |||
| Storage temperature | -55 | 150 | C | |||
| Soldering temperature | 260 | C | ||||
| Emitter Characteristics | ||||||
| Forward current | 60 | mA | ||||
| Peak transient current | (1s P.W,300pps) | 1000 | mA | |||
| Reverse voltage | 6 | V | ||||
| Emitter power dissipation | 100 | mW | ||||
| Forward voltage | IF=10mA | 1.25 | 1.4 | V | ||
| Reverse Current | VR = 6V | 5 | A | |||
| Input Capacitance | f= 1MHz | 30 | pF | |||
| Detector Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | IC= 100A | 55 | V | |||
| Emitter-Collector Breakdown Voltage | IE= 100A | 7 | V | |||
| Collector Current | 80 | mA | ||||
| Detector power dissipation | 150 | mW | ||||
| Collector-Emitter Dark Current | VCE= 24V, IF=0mA | 100 | nA | |||
| Collector-Emitter Dark Current | VCE= 24V, IF=0mA,Ta = 85C | 50 | A | |||
| Transfer Characteristics | ||||||
| Current Transfer Ratio | IF= 5mA, VCE= 5V | 100 | 600 | % | ||
| Current Transfer Ratio | IF= 1mA, VCE= 0.4V | 30 | % | |||
| Collector-Emitter Saturation Voltage | IF=1mA, IC= 0.2mA | 0.4 | V | |||
| Isolation Resistance | VIO= 500VDC | 5x1010 | ||||
| Isolation Capacitance | f= 1MHz | 0.25 | 1 | pF | ||
| Switching Characteristics | ||||||
| Rise Time | IC= 2mA, VCE= 2V RL= 100 | 16 | s | |||
| Fall Time | 16 | s | ||||
| Turn-on time | 20 | s | ||||
| Turn-off time | 20 | s | ||||
2410121521_CT-MICRO-CT521GB_C191862.pdf
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