DC DIP phototransistor optocoupler CT MICRO CT521-1GB SL T1 designed for switch mode power supplies
Key Attributes
Model Number:
CT521-1GB(SL)(T1)
Product Custom Attributes
Output Current:
80mA
Fall Time:
16us
Rise Time:
16us@2mA,100Ω
Vce Saturation(VCE(sat)):
400mV@1mA,0.2mA
Operating Temperature:
-55℃~+125℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
600%;30%
Forward Current(If):
60mA
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5.3kV
Mfr. Part #:
CT521-1GB(SL)(T1)
Package:
SOP-4-2.54mm
Product Description
Product Overview
The CT521-1GB is a DC DIP phototransistor optocoupler designed for high isolation applications. It features a gallium arsenide infrared-emitting diode optically coupled to a phototransistor, offering a high isolation voltage of 5300 VRMS. This optocoupler is suitable for operating temperatures ranging from -55 C to 125 C and complies with RoHS, REACH, and is Halogen-free. Key applications include switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.
Product Attributes
- Brand: CT Micro
- Product Type: DC DIP Phototransistor Optocoupler
- Compliance: RoHS, REACH, Halogen Free
- Regulatory Approvals (Pending): UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC60065, IEC60950
Technical Specifications
| Parameter | Rating | Units | Notes |
|---|---|---|---|
| Isolation Voltage (VISO) | 5300 | VRMS | |
| Total Power Dissipation (PTOT) | 200 | mW | |
| Operating Temperature (TOPR) | -55 ~ +125 | C | |
| Storage Temperature (TSTG) | -55 ~ +150 | C | |
| Soldering Temperature (TSOL) | 260 | C | |
| Emitter Forward Current (IF) | 60 | mA | |
| Emitter Peak Transient Current (IF(TRANS)) | 1000 | mA | 1s P.W, 300pps |
| Emitter Reverse Voltage (VR) | 6 | V | |
| Emitter Power Dissipation (PD) | 100 | mW | |
| Detector Power Dissipation (PC) | 150 | mW | |
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | |
| Emitter-Collector Breakdown Voltage (BVECO) | 7 | V | |
| Collector Current (IC) | 80 | mA | |
| Forward Voltage (VF) | - 1.25 1.4 | V | IF=10mA |
| Reverse Current (IR) | - - 5 | A | VR = 6V |
| Input Capacitance (CIN) | - 30 - | pF | f= 1MHz |
| Collector-Emitter Breakdown Voltage (BVCEO) | 55 - - | V | IC= 100A |
| Emitter-Collector Breakdown Voltage (BVECO) | 7 - - | V | IE= 100A |
| Collector-Emitter Dark Current (ICEO) | - - 100 | nA | VCE= 24V, IF=0mA |
| Collector-Emitter Dark Current (ICEO) | - - 50 | A | VCE= 24V, IF=0mA, Ta = 85C |
| Current Transfer Ratio (CTR) | 100 - 600 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) | 30 - - | % | IF= 1mA, VCE= 0.4V |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | - - 0.4 | V | IF=1mA, IC= 0.2mA |
| Isolation Resistance (RIO) | 5x1010 - - | VIO= 500VDC | |
| Isolation Capacitance (CIO) | - 0.25 1 | pF | f= 1MHz |
| Rise Time (tr) | - 16 | s | IC= 2mA, VCE= 2V, RL= 100 |
| Fall Time (tf) | - 16 | s | |
| Turn-on Time (ton) | - 20 | s | |
| Turn-off Time (toff) | - 20 | s |
2410121521_CT-MICRO-CT521-1GB-SL-T1_C191863.pdf
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