Phototransistor optocoupler CT MICRO CT785GR featuring gallium arsenide infrared LED and 5300 VRMS isolation voltage
Key Attributes
Model Number:
CT785GR
Product Custom Attributes
Output Current:
80mA
Fall Time:
16us
Rise Time:
16us@2mA,100Ω
Vce Saturation(VCE(sat)):
200mV@2.4mA,8mA
Operating Temperature:
-55℃~+125℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
100%;300%
Forward Current(If):
60mA
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5.3kV
Mfr. Part #:
CT785GR
Package:
DIP-4
Product Description
Product Overview
The CT785 series is a DC 4-pin DIP phototransistor optocoupler, featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode. It offers high isolation of 5300 VRMS and operates within a temperature range of -55 C to 125 C. This series is compliant with RoHS, REACH, and Halogen-free standards, and is pending approval for UL, VDE, CQC, and IEC regulatory standards. Ideal for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.
Product Attributes
- Brand: CT Micro
- Compliance: RoHS, REACH, Halogen Free
- Regulatory Approvals (Pending): UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC60065, IEC60950
Technical Specifications
| Parameter | Rating | Units | Notes |
|---|---|---|---|
| Absolute Maximum Rating at 25C | |||
| Isolation Voltage (VISO) | 5300 | VRMS | |
| Total Power Dissipation (PTOT) | 200 | mW | |
| Operating Temperature (TOPR) | -55 ~ +125 | C | |
| Storage Temperature (TSTG) | -55 ~ +150 | C | |
| Soldering Temperature (TSOL) | 260 | C | |
| Emitter Characteristics | |||
| Forward Current (IF) | 60 | mA | |
| Peak Transient Current (IF(TRANS)) | 1000 | mA | 1s P.W, 300pps |
| Reverse Voltage (VR) | 6 | V | |
| Emitter Power Dissipation (PD) | 100 | mW | |
| Detector Characteristics | |||
| Detector Power Dissipation (PC) | 150 | mW | |
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | |
| Emitter-Collector Breakdown Voltage (BVECO) | 7 | V | |
| Collector Current (IC) | 80 | mA | |
| Electrical Characteristics (TA = 25C) | |||
| Emitter Characteristics | |||
| Forward Voltage (VF) | - 1.2 1.3 | V | IF= 10mA |
| Reverse Current (IR) | - - 5 | A | VR= 6V |
| Input Capacitance (CIN) | - 10 30 | pF | f= 1MHz |
| Detector Characteristics | |||
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 - - | V | IC= 100A |
| Emitter-Collector Breakdown Voltage (BVECO) | 7 - - | V | IEC= 100A |
| Collector-Emitter Dark Current (ICEO) | - - 100 | n A | VCE= 24V, IF= 0mA |
| Collector-Emitter Dark Current (ICEO) | - 50 | A | VCE= 24V, IF=0Ma , Ta=85C |
| Transfer Characteristics | |||
| Current Transfer Ratio (CTR) CT785GB | 100 600 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT785GR | 100 300 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT785BLL | 200 400 | % | IF= 5mA, VCE= 5V |
| Saturated CTR (CTR(sat)) CT785GB | - 60 - | % | IF= 1mA, VCE= 0.4V |
| Saturated CTR (CTR(sat)) CT785GR | 30 - - | % | IF= 1mA, VCE= 0.4V |
| Saturated CTR (CTR(sat)) CT785BLL | - 60 - | % | IF= 1mA, VCE= 0.4V |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | - 0.2 0.4 | V | IF= 8mA, IC= 2.4mA |
| Isolation Resistance (RIO) | 5x1010 - - | VIO= 500VDC | |
| Isolation Capacitance (CIO) | - 0.25 1 | pF | f= 1MHz |
| Switching Characteristics | |||
| Rise Time (tr) | - 16 | s | IC= 2mA, VCE= 2V, RL= 100 |
| Fall Time (tf) | - 16 | s | |
| Turn-on Time (ton) | 20 | s | |
| Turn-off Time (toff) | 20 | s | |
2410121521_CT-MICRO-CT785GR_C191925.pdf
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