Robust DC Input Phototransistor Optocoupler CT MICRO CT816D SL T3 H for in Electronic Control Systems

Key Attributes
Model Number: CT816D(SL)(T3)-H
Product Custom Attributes
Rise Time:
9us
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Load Type:
Phototransistor
Current Transfer Ratio:
300%;600%
Forward Current(If):
60mA
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Number Of Channels:
1
Mfr. Part #:
CT816D(SL)(T3)-H
Package:
SOP-4-2.54mm
Product Description

Product Overview

The CT816 Series is a 4-pin phototransistor optocoupler featuring high isolation (5000 VRMS) and DC input with a transistor output. Designed for reliability and performance, it offers flexible Current Transfer Ratio (CTR) options and operates across a wide temperature range of -55 C to 110 C. The optocoupler is suitable for applications in switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. It meets various international regulatory approvals including UL, VDE, CQC, and IEC standards.

Product Attributes

  • Brand: CT Micro
  • Series: CT816 Series
  • Type: DC Input 4-Pin Phototransistor Optocoupler
  • Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
  • Material Option: Green (G) or Non-green
  • Lead Frame Option: Iron (H) or Copper

Technical Specifications

Parameter Rating Unit Notes
Absolute Maximum Ratings
Isolation Voltage (AC, 1 minute) 5000 VRMS
Total Power Dissipation 200 mW
Operating Temperature -55 ~ +110 C
Storage Temperature -55 ~ +150 C
Soldering Temperature 260 C
Emitter Characteristics
Forward Current (IF) 60 mA
Peak Transient Current (IF(TRANS)) 1 A (1s P.W, 300pps)
Reverse Voltage (VR) 6 V
Emitter Power Dissipation (PD) 100 mW
Detector Characteristics
Collector-Emitter Breakdown Voltage (BVCEO) 80 V
Emitter-Collector Breakdown Voltage (BVECO) 6 V
Collector Current (IC) 50 mA
Electrical Characteristics (TA = 25C unless otherwise specified)
Forward Voltage (VF) - 1.24 1.4 V IF=10mA
Reverse Current (IR) - - 5 A VR = 6V
Input Capacitance (CIN) - 30 - pF f=1MHz
Collector-Emitter Breakdown Voltage (BVCEO) 80 - - V IC= 100A
Emitter-Collector Breakdown Voltage (BVECO) 6 - - V IE= 100A
Collector-Emitter Dark Current (ICEO) - - 100 nA VCE= 20V, IF=0mA
Transfer Characteristics
Current Transfer Ratio (CTR) CT816 50 - 600 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT816A 80 - 160 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT816B 130 - 260 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT816C 200 - 400 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT816D 300 - 600 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT816F 100 - 200 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT816I 63 - 125 % IF= 10mA, VCE= 5V
Current Transfer Ratio (CTR) CT816J 100 - 200 % IF= 10mA, VCE= 5V
Current Transfer Ratio (CTR) CT816K 160 - 320 % IF= 10mA, VCE= 5V
Current Transfer Ratio (CTR) CT816I 22 - - % IF= 1mA, VCE= 5V
Current Transfer Ratio (CTR) CT816J 34 - - % IF= 1mA, VCE= 5V
Current Transfer Ratio (CTR) CT816K 56 - - % IF= 1mA, VCE= 5V
Collector-Emitter Saturation Voltage (VCE(SAT)) - 0.1 0.2 V IF= 20mA, IC= 1mA
Isolation Resistance (RIO) 5x1010 - - VIO= 500VDC
Isolation Capacitance (CIO) - 0.25 1 pF f=1MHz
Switching Characteristics
Rise Time (tr) - 6 - s IC= 2mA, VCE= 2V, RL= 100
Fall Time (tf) - 8 - s
Package Dimensions
Spatial Distance (S/SL Type) 7.5 mm
Spatial Distance (M/SLM Type) 8.0 mm
External Creepage 7.4 mm
Distance Through Isolation 0.4 mm

2410121502_CT-MICRO-CT816D-SL-T3-H_C337695.pdf

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