4 Pin Mini Flat Phototransistor Optocoupler CT MICRO CTH214A T1 AC Input Transistor Output Component

Key Attributes
Model Number: CTH214A(T1)
Product Custom Attributes
Rise Time:
9.8us
Fall Time:
8us
Output Current:
50mA
Vce Saturation(VCE(sat)):
40mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
-
Current Transfer Ratio:
50%;150%
Forward Current(If):
50mA
Pd - Power Dissipation:
200mW
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
AC,DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
CTH214A(T1)
Package:
SOP-4-1.27mm
Product Description

Product Overview

The CTH214 series is an AC input, 4-pin half pitch Mini-Flat DMC-Isolator phototransistor optocoupler. It features high isolation of 3750 VRMS and a patented coplanar structure. Available with various Current Transfer Ratio (CTR) selections, this optocoupler is designed for AC input with transistor output and operates within a temperature range of -55 C to 110 C. It is compliant with RoHS, REACH, and Halogen Free standards, and holds multiple regulatory approvals including UL, VDE, CQC, and IEC62368. The CTH214 series is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.

Product Attributes

  • Brand: CT MICRO INTERNATIONAL CORPORATION
  • Product Line: CTH214 Series
  • Technology: DMC-Isolator
  • Certifications: UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC62368
  • Compliance: RoHS, REACH, Halogen Free
  • Package Type: 4-Pin Half Pitch Mini-Flat
  • Input Type: AC Input
  • Output Type: Transistor Output

Technical Specifications

Symbol Parameters Test Conditions Min Typ Max Units Notes
Absolute Maximum Ratings (TA = 25C, unless otherwise specified)
VISO Isolation voltage 3750 VRMS
PTOT Total power dissipation 200 mW
TOPR Operating temperature -55 110 C
TSTG Storage temperature -55 150 C
TSOL Soldering temperature 260 C
IF Forward current 50 mA
IF(TRANS) Peak transient current (1s P.W,300pps) 1 A
PD (Emitter) Emitter power dissipation 70 mW
PD (Detector) Detector power dissipation 150 mW
BVCEO Collector-Emitter Breakdown Voltage 80 V
BVECO Emitter-Collector Breakdown Voltage 6 V
IC Collector Current 50 mA
Electrical Characteristics (TA = 25C, unless otherwise specified)
Emitter Characteristics
VF Forward voltage IF=10mA 1.24 1.4 V
CIN Input Capacitance f= 1MHz 30 pF
Detector Characteristics
BVCEO Collector-Emitter Breakdown IC= 100A 80 V
BVECO Emitter-Collector Breakdown IE= 100A 6 V
ICEO Collector-Emitter Dark Current VCE= 20V, IF=0mA 100 nA
Transfer Characteristics
CTR Current Transfer Ratio CTH214, IF= 1mA, VCE= 5V 20 300 %
CTR Current Transfer Ratio CTH214A, IF= 1mA, VCE= 5V 50 150 %
CTR Current Transfer Ratio CTH214B, IF= 1mA, VCE= 5V 100 300 %
CTR Current Transfer Ratio CTH214, IF= 5mA, VCE= 5V 30 600 %
CTR Current Transfer Ratio CTH214A, IF= 5mA, VCE= 5V 80 300 %
CTR Symmetry IF= 1mA, VCE= 5V 0.7 1.3
VCE(SAT) Collector-Emitter Saturation Voltage IF= 20mA, IC= 1mA 0.04 0.2 V
RIO Isolation Resistance VIO= 500VDC 5x1010
CIO Isolation Capacitance f= 1MHz 0.5 1 pF
Switching Characteristics
tr Rise Time IC= 2mA, VCE= 2V, RL= 100 6 s
tf Fall Time 8

2410121548_CT-MICRO-CTH214A-T1_C2940729.pdf
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