Phototransistor optocoupler Broadcom 4N25-000E offering signal transmission and wide lead spacing options

Key Attributes
Model Number: 4N25-000E
Product Custom Attributes
Rise Time:
3us
Fall Time:
3us
Output Current:
100mA
Vce Saturation(VCE(sat)):
100mV@50mA,2mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
30V
Reverse Voltage:
6V
Current Transfer Ratio:
-;20%
Forward Current(If):
80mA
Pd - Power Dissipation:
250mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
2.5kV
Mfr. Part #:
4N25-000E
Package:
DIP-6
Product Description

Product Overview

The 4N25 is a general-purpose optocoupler designed for reliable signal transmission between circuits of different potentials and impedances. It integrates a light-emitting diode optically coupled to a phototransistor, housed in a 6-pin DIP package. This optocoupler offers a fast response time of typically 3 s and a minimum Current Transfer Ratio (CTR) of 20% at an input current of 10 mA. Its robust input-output isolation voltage of 2500 Vrms makes it suitable for various applications including I/O interfaces for computers, system appliances, and measuring instruments. Available options include wide-lead spacing and surface-mount configurations.

Product Attributes

  • Brand: Avago Technologies
  • Product Type: Phototransistor Optocoupler
  • Certifications: UL Recognized (UL1577), CSA Component Acceptance Notice #5, IEC/EN/DIN EN 60747-5-2
  • Compliance: RoHS 6 fully compliant, Lead (Pb) Free
  • Package Type: Dual-in-line package (DIP)

Technical Specifications

Specification Value Conditions
Response Time (tr) 3 s (typ.) VCE = 10 V, IC = 2 mA, RL = 100
Current Transfer Ratio (CTR) 20% (min.) IF = 10 mA, VCE = 10 V
Input-Output Isolation Voltage (Viso) 2500 Vrms AC for 1 minute
Forward Voltage (VF) 1.2 V (typ.), 1.5 V (max.) IF = 10 mA
Reverse Current (IR) 10 A (max.) VR = 4 V
Collector Dark Current (ICEO) 50 nA (max.) VCE = 10 V, IF = 0
Collector-Emitter Breakdown Voltage (BVCEO) 30 V (min.) IC = 0.1 mA, IF = 0
Collector-Emitter Saturation Voltage (VCE(sat)) 0.5 V (max.) IF = 50 mA, IC = 2 mA
Isolation Resistance (Riso) 1 x 1011 (min.) DC 500 V, 40-60% R.H.
Storage Temperature -55C to +150C
Operating Temperature -55C to +100C
Lead Solder Temperature 260C for 10 s (1.6 mm below seating plane)
Input Power Dissipation (PI) 150 mW
Collector Power Dissipation (PC) 150 mW
Total Power Dissipation 250 mW
Dimensions (DIP-6) 7.62 0.3 mm (0.3") length
Dimensions (Wide Lead DIP-6) 10.16 0.5 mm (0.4") length
Available Options Leads with 0.4" (10.16 mm) spacing (W00), Leads bends for surface mounting (300), Tape and reel for SMD (500), IEC/EN/DIN EN 60747-5-2 approvals (060)

2410311308_Broadcom-4N25-000E_C18198810.pdf

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