Power MOSFET Gate Drive Optocoupler Broadcom ACPL-P346-060E with Compact Stretched SO6 Package

Key Attributes
Model Number: ACPL-P346-060E
Product Custom Attributes
Operating Temperature:
-40℃~+105℃
Isolation Voltage(Vrms):
3.75kV
Voltage - Supply:
1.55V
Number Of Channels:
1
Mfr. Part #:
ACPL-P346-060E
Package:
SOIC-6-6.8mm
Product Description

Broadcom ACPL-P346/W346 Optocoupler: High-Performance Gate Drive for Power MOSFETs

The Broadcom ACPL-P346/W346 is an optically isolated power output stage designed for driving power, GaN (Gallium Nitride), and SiC (Silicon Carbide) MOSFETs. Leveraging BCDMOS technology, this gate drive optocoupler offers enhanced peak output current, superior rail-to-rail output voltage, and double the speed of previous generations. Its high peak output current and short propagation delay are crucial for rapid MOSFET switching, enabling reduced dead time and improved system efficiency. The rail-to-rail output voltage ensures optimal MOSFET gate drive, minimizing power loss and facilitating lower system power consumption, making it suitable for bootstrap power supply operation. With a very high Common Mode Rejection (CMR) rating, it effectively handles significant common-mode noise in industrial motor drives and other power switching applications. The input features direct LED current drive with built-in hysteresis, preventing output oscillation and eliminating the need for external Schmitt trigger circuits. The compact Stretched SO6 package offers space savings and complies with industrial safety standards like IEC/EN/DIN EN 60747-5-5, UL 1577, and CSA.

Product Overview

The Broadcom ACPL-P346/W346 optocoupler is engineered for efficient driving of power, GaN, and SiC MOSFETs in demanding applications such as inverter and AC-DC/DC-DC converter systems. It delivers high peak output current and rail-to-rail output voltage for optimal MOSFET gate control, leading to improved system efficiency and reduced power consumption. Its high CMR capability ensures reliable operation in noisy industrial environments. The integrated hysteresis on the LED input simplifies design by preventing oscillations. Available in a compact Stretched SO6 package, it meets stringent safety approvals.

Product Attributes

  • Brand: Broadcom
  • Technology: BCDMOS
  • Package Type: Stretched SO-6 Surface Mount
  • Safety Approvals: UL Recognized, CSA, IEC/EN/DIN EN 60747-5-5
  • RoHS Compliant: Available

Technical Specifications

Feature Specification Details
Maximum Peak Output Current 2.5 A Maximum
Minimum Peak Output Current 2.0 A Minimum
Output Voltage Rail-to-rail
Maximum Propagation Delay (tPLH/tPHL) 120 ns
Maximum Propagation Delay Difference (PDD) 50 ns
LED Current Input With hysteresis
Minimum Common Mode Rejection (CMR) 100 kV/s at VCM = 1500V
Maximum Supply Current (ICC) 4.0 mA
Protection Under Voltage Lock-Out (UVLO) with hysteresis
Wide Operating VCC Range 10V to 20V
Industrial Temperature Range 40C to +105C
UL Recognition 3750 VRMS / 5000 VRMS (ACPL-W346) for 1 min.
IEC/EN/DIN EN 60747-5-5 VIORM 891 Vpeak (ACPL-P346) / 1140 Vpeak (ACPL-W346)
Applications Power, GaN, and SiC MOSFET gate drive; AC and brushless DC motor drives; Switching power supplies
Model ACPL-P346 VIORM = 891 Vpeak
Model ACPL-W346 VIORM = 1140 Vpeak
Input to Output Test Voltage (Method ba) 1671 Vpeak (ACPL-P346) / 2137 Vpeak (ACPL-W346)
Highest Allowable Overvoltage (VIOTM) 6000 Vpeak (ACPL-P346) / 8000 Vpeak (ACPL-W346)
Safety-limiting values (Case Temp TS) 175 C Maximum
Safety-limiting values (Input Current IS, INPUT) 230 mA Maximum
Safety-limiting values (Output Power PS, OUTPUT) 600 mW Maximum
Insulation Resistance (at TS, VIO = 500V) >109
Minimum External Air Gap (Clearance) L(101) 7.0 mm (ACPL-P346) / 8.0 mm (ACPL-W346)
Minimum External Tracking (Creepage) L(102) 8.0 mm
Minimum Internal Plastic Gap (Internal Clearance) 0.08 mm
Tracking Resistance (CTI) >175 V
Storage Temperature 55C to +125C
Operating Temperature 40C to +105C
Output IC Junction Temperature 125C Maximum
Average Input Current IF(AVG) 25 mA Maximum (derated linearly above 85C)
Peak Transient Input Current IF(TRAN) 1 A (<1 second pulse width, 300 pps)
Reverse Input Voltage VR 5 V Maximum
Total Output Supply Voltage (VCC VEE) 0V to 25V
Output IC Power Dissipation PO 500 mW Maximum (derated linearly above 85C)
Total Power Dissipation PT 550 mW Maximum (derated linearly above 85C)
Recommended Operating Conditions: Input Current (ON) IF(ON) 7 mA to 11 mA
Recommended Operating Conditions: Input Voltage (OFF) VF(OFF) 3.6V to +0.8V
High Level Peak Output Current IOH 2.0 A (Typ) VCC VO = 10V
Low Level Peak Output Current IOL 2.0 A (Min) / 4.4 A (Typ) VO VEE = 10V
High Output Transistor RDS(ON) RDS,OH 0.3 (Typ) to 3.5 (Max) IOH = 2.0A
Low Output Transistor RDS(ON) RDS,OL 0.3 (Typ) to 2.0 (Max) IOL = 2.0A
Low Level Output Voltage VOL 0.1 V (Typ) to 0.25 V (Max) IOUT = 100 mA
Threshold Input Current Low to High IFLH 0.5 mA (Min) to 4.0 mA (Max) VO > 5V
UVLO Threshold VUVLO+ 8.1V (Min) to 9.1V (Max) VO > 5V, IF = 9 mA
UVLO Threshold VUVLO- 7.1V (Min) to 8.1V (Max)
UVLO Hysteresis UVLOHYS 0.5 (Min) to 1.0 (Typ) V
Switching Specifications: tPLH 30 ns (Min) to 120 ns (Max)
Switching Specifications: tPHL 30 ns (Min) to 120 ns (Max)
Pulse Width Distortion (PWD) 0 ns (Typ) to 50 ns (Max)
Propagation Delay Difference Between Any Two Parts (PDD) 50 ns (Min) to +50 ns (Max)
Propagation Delay Skew (tPSK) 40 ns Maximum
Rise Time (tR) 8 ns (Typ) to 30 ns (Max)
Fall Time (tF) 8 ns (Typ) to 30 ns (Max)
Output High Level Common Mode Transient Immunity (|CMH|) 100 kV/s Minimum
Output Low Level Common Mode Transient Immunity (|CML|) 100 kV/s Minimum
Input-Output Momentary Withstand Voltage (VISO) 3750 VRMS (ACPL-P346) / 5000 VRMS (ACPL-W346) t = 1 min.
Input-Output Resistance RI-O >50 G
Input-Output Capacitance CI-O 0.6 pF Typical
LED-to-Ambient Thermal Resistance R11 135 C/W Typical
LED-to-Detector Thermal Resistance R12 27 C/W Typical
Detector-to-LED Thermal Resistance R21 39 C/W Typical
Detector-to-Ambient Thermal Resistance R22 47 C/W Typical

2412161837_Broadcom-ACPL-P346-060E_C17214114.pdf

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