High current IGBT gate driver optocoupler Broadcom ACNW3190-500E for in AC brushless DC motor drives

Key Attributes
Model Number: ACNW3190-500E
Product Custom Attributes
Power Dissipation:
850mW
Output Current:
5A
Operating Temperature:
-40℃~+100℃
Isolation Voltage(Vrms):
5kV
Propagation Delay(tpd):
500ns;500ns
Reverse Voltage:
5V
Load Type:
MOSFET;IGBT
Rise Time:
100ns
Voltage - Supply:
15V~30V
Fall Time:
100ns
Voltage - Forward(Vf):
1.6V
CMTI(kV/us):
15kV/us
Number Of Channels:
1
Mfr. Part #:
ACNW3190-500E
Package:
SMD-8-400mil
Product Description

Product Overview

The ACNW3190 is a high-output current IGBT gate drive optocoupler designed for driving power IGBTs and MOSFETs in motor control inverter applications. It features an integrated circuit with a power output stage, offering a high operating voltage range suitable for gate-controlled devices. This optocoupler is ideal for directly driving IGBTs up to 1200V/200A or 600V/300A, and can also drive discrete power stages for higher-rated IGBTs. Key advantages include a maximum peak output current of 5.0A, high common mode rejection, and a low output voltage that eliminates the need for negative gate drive. It is widely used in IGBT/MOSFET gate drives, AC/Brushless DC motor drives, industrial inverters, and switch mode power supplies.

Product Attributes

  • Brand: Avago Technologies
  • Certifications: UL Recognized (5000 Vrms for 1 min), CSA Approval, IEC/EN/DIN EN 60747-5-2 Approved
  • Compliance: Lead (Pb) Free, RoHS 6 fully compliant

Technical Specifications

Feature Specification Unit Notes
Maximum Peak Output Current 5.0 A
Minimum Common Mode Rejection (CMR) 15 kV/s at VCM = 1500 V
Maximum Low Level Output Voltage (VOL) 0.5 V
Maximum Supply Current (ICC) 5 mA
Under Voltage Lock-Out Protection (UVLO) Included with Hysteresis
Wide Operating VCC Range 15 to 30 Volts
Maximum Switching Speeds 500 ns
Industrial Temperature Range -40 to 100 C
Input-Output Test Voltage (IEC/EN/DIN EN 60747-5-2, Method b) 2652 Vpeak 100% Production Test, tm=1 sec, Partial discharge < 5 pC
Input-Output Test Voltage (IEC/EN/DIN EN 60747-5-2, Method a) 2121 Vpeak Type and Sample Test, tm=60 sec, Partial discharge < 5 pC
Highest Allowable Overvoltage (VIOTM) 8000 Vpeak tini = 10 sec
Insulation Resistance (at TS, VIO = 500 V) 109
Minimum External Air Gap (Clearance) L(101) 9.6 mm
Minimum External Tracking (Creepage) L(102) 10.0 mm
Minimum Internal Plastic Gap (Internal Clearance) 1.0 mm
Tracking Resistance (CTI) >200 V DIN IEC 112/VDE 0303 Part 1
Storage Temperature -55 to 125 C
Operating Temperature -40 to 100 C
Output IC Junction Temperature 150 C
Average Input Current 25 mA
Peak Transient Input Current 1.0 A <1 s pulse width, 300pps
Reverse Input Voltage 5 V
Total Output Supply Voltage (VCC - VEE) -0.5 to 35 V
Output IC Power Dissipation (PO) 800 mW
Total Power Dissipation (PT) 850 mW
Recommended Operating Supply Voltage (VCC - VEE) 15 to 30 V
Recommended Input Current (ON) 10 to 16 mA
Recommended Input Voltage (OFF) -3.6 to 0.8 V
High Level Output Current (IOH) 1.0 to 4.0 A VO = VCC - 4 or VCC - 15
Low Level Output Current (IOL) 1.0 to 4.0 A VO = VEE + 2.5 or VEE + 15
High Level Output Voltage (VOH) VCC-4 to VCC-3 V IO = -100 mA
Low Level Output Voltage (VOL) 0.1 to 0.5 V IO = 100 mA
Propagation Delay Time to High Output Level (tPLH) 0.10 to 0.50 s
Propagation Delay Time to Low Output Level (tPHL) 0.10 to 0.50 s
Pulse Width Distortion (PWD) 0.30 s
Rise Time (tr) 0.1 s
Fall Time (tf) 0.1 s
UVLO to Turn On Delay (tUVLO,ON) 0.8 s
UVLO to Turn Off Delay (tUVLO,OFF) 0.6 s
Output High Level CMR (|CMH|) 15 to 30 kV/s
Output Low Level CMR (|CML|) 15 to 30 kV/s
Input-Output Momentary Withstand Voltage (VISO) 5000 VRMS t = 1 min.
Input-Output Resistance (RI-O) 1012 to 1013 VI-O = 500 VDC, TA = 25C
Input-Output Capacitance (CI-O) 0.5 to 0.6 pF f =1 MHz

2410121914_Broadcom-ACNW3190-500E_C3019221.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.